74H1G66
SINGLE BILATERAL SWITCH
■ HIGHSPEED:t
■
LOW POWERDISSIPATION:
I
=1 µA (MAX.)at TA=25oC
CC
■ HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ LOW”ON”RESISTANCE
R
ON
■ SINE WAVEDISTOR TION
=28%VCC(MIN.)
=50Ω(TYP.)AT VCC=9VI
0.042%(T YP.)ATV
■
WIDEOPERATING VOLTAGERANGE:
(OPR)= 2Vto12V
V
CC
=4 ns(TYP.)atVCC=5V
PD
=100µA
I/O
=4Vf=1KHz
CC
DESCRIPTION
The 74H1G66 is an high-speed CMOS SINGLE
BILATERAL SWITCH fabricated in silicon gate
2
MOS technology. It has high speed
C
S
(SOT23-5L)
ORDERCODES :
74H1G66S
performance combined with true CMOS low
powerconsumption.
The C input is provided to control the switch; the
switchis ONwhenthe C input is held high and off
when C is heldlow.
PIN CONNECTION AND IEC LOGIC SYMBOLS
February 2000
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74H1G66
LOGICDIAGRAM
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTION
1 I/O Independent Input/Output
2 O/I Independent Output/Input
4 C Enable Input (Active
HIGH)
3 GND Ground (0V)
5V
CC
Positive Supply Voltage
TRUTH TABLE
CONT ROL SW I TCH F UNC T I ON
HON
L OFF
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
IOK
I
or I
I
CC
P
T
T
AbsoluteMaximumRatingsarethosevaluesbeyond whichdamagetothedevice mayoccur. Functionaloperationunderthesecondition isnotimplied.
(*)500mW:≡65
Supply Voltage -0.5 to +13 V
CC
DC Input Voltage -0.5 to VCC+0.5 V
I
DC Input/Output Voltage -0.5 to VCC+ 0.5 V
I/O
Control Input DC Diode Current ± 20 mA
IK
Input/Output DC Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin
O
DC VCCor Ground Current
GND
Power Dissipation 500 (*) mW
D
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
Cderate to300 mW by10 mW/oC:65oCto85oC
25 mA
±
50 mA
±
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
Supply Voltage 2.0 to 12 V
CC
Input Voltage (Control) 0 to V
I
Input/Output Voltage 0 to V
I/O
Operating Temperature -40 to +85
op
CC
CC
Input Rise and Fall Time VCC= 2V 0 to 1000 ns
= 4.5V 0 to 500
V
CC
= 6V 0 to 400
V
CC
= 10V 0 to 250
V
CC
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V
V
T
t
r,tf
V
V
V
o
C
74H1G66
DC SPECIFICATIONS
Symb o l Para met er Test Co n ditio ns Val u e Uni t
=25oC -40 t o 85oC
T
A
Min. Typ. Max. Min. Max.
96 170 200
70 100 130
±0.1 ±1.0
±0.1 ±1.0
0.1
1.0
±
110
µ
µA
µ
µ
R
I
High Level Input
V
IH
Voltage
Low Level Input
V
IL
Voltage
ON Resistance 4.5
ON
Input/Output Leakage
OFF
Current (SWITCH OFF)
Switch Input Leakage
I
IZ
Current (SWITCH ON,
OUTPUT OPEN)
Control Input Current 6.0
I
IN
Quiescent Supply
I
CC
Current
V
CC
(V)
2.0 1.5 1.5
4.5 3.15 3.15
9.0 6.3 6.3
12.0 8.4 8.4
2.0 0.5 0.5
4.5 1.35 1.35
9.0 2.7 2.7
12.0 3.6 3.6
V
I=VIH
V
9.0 55 85 100
I/O=VCC
12.0 45 80 90
4.5
V
9.0 50 75 95
I/O=VCC
12.0 45 70 90
I
I/O
V
I
I/O
1mA
≤
I=VIH
1mA
≤
to GND
or GND
12.0 VOS=VCCto GND
12.0
V
IS=VCC
V
OS=VCC
V
I=VCC
to GND
V
I=VIL
to GND
V
I=VIH
to G ND ±
6.0
V
9.0 4 40
I=VCC
or GND
12.0 8 80
V
V
Ω
A
A
A
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