SGS Thomson Microelectronics 74ACT32MTR, 74ACT32M, 74ACT32B, 74ACT32TTR Datasheet
74ACT32
QUAD 2-INPUT OR GATE
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 2µA(MAX.) at TA=25°C
CC
■ COMPA TIBLE WITH TTL OUTPUTS
V
= 2V (MIN.), VIL = 0.8V (MAX.)
IH
■ 50Ω TRANSMISSI O N L INE DRI VING
= 4.5ns (TYP.) at VCC = 5V
PD
CAPABILITY
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 24mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ OPERATING VOL TAGE RANGE:
V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
PHL
(OPR) = 4.5V to 5.5V
74 SERIES 32
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74ACT32 is an advanced high-speed CMOS
QUAD 2-INPUT OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring
2
MOS tecnology.
C
The internal circuit is composed of 2 stages
including buffer output , which enables high noise
immunity and stable output.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP 74ACT32B
SOP 74ACT32M 74ACT32MTR
TSSOP 74ACT32TTR
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOS output voltage levels.
All inputs and outputs are equipped w ith protection circuits a gainst static discharge, giving them
2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8April 2001
74ACT32
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
TRUTH TABLE
ABY
LLL
LHH
HLH
HHH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7 V
± 20 mA
± 20 mA
± 50 mA
± 200 mA
-65 to +150 °C
300 °C
V
V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 0.8V to 2.0V
2/8
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time V
= 4.5 to 5.5V (note 1)
CC
4.5 to 5.5 V
CC
CC
-55 to 125 °C
8 ns/V
V
V
DC SPECIFICATIONS
Test Condition Value
= 25°C
Symbol Parameter
V
CC
(V)
V
V
V
V
I
CCT
I
I
OLD
I
OHD
1) Maxim um test duration 2ms, one output loaded at tim e
2) Incid ent wave switching is guaranteed on transmission l i nes with impe dances as low as 50Ω
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage Cur-
I
rent
Max ICC/Input
Quiescent Supply
CC
Current
Dynamic Output
Current (note 1, 2)
4.5 VO = 0.1 V or
V
-0.1V
CC
4.5 VO = 0.1 V or
V
5.5 1.5 0.8 0.8 0.8
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
V
5.5
5.5
V
5.5
V
5.5
V
-0.1V
CC
IO=-50 µA
I
=-50 µA
O
I
=-24 mA
O
I
=-24 mA
O
IO=50 µA
I
=50 µA
O
I
=24 mA
O
I
=24 mA
O
= VCC or GND
I
VI = VCC - 2.1V
= VCC or GND
I
= 1.65 V max
OLD
= 3.85 V min
OHD
T
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.5 2.0 2.0
1.5 0.8 0.8 0.8
4.4 4.49 4.4 4.4
5.4 5.49 5.4 5.4
3.86 3.76 3.7
4.86 4.76 4.7
0.001 0.1 0.1 0.1
0.001 0.1 0.1 0.1
0.36 0.44 0.5
0.36 0.44 0.5
± 0.1 ± 1 ± 1 µA
0.6 1.5 1.6 mA
22040µA
74ACT32
-40 to 85°C -55 to 125°C
75 50 mA
-75 -50 mA
Unit
V5.5 2.0 1.5 2.0 2.0
V
V
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf = 3ns)
Test Condition Value
= 25°C
Symbol Parameter
t
PLH tPHL
(*) Vol tage range is 5.0V ± 0.5V
Propagation Delay
Time
V
5.0
(V)
CC
T
A
Min. Typ. Max. Min. Max. Min. Max.
(*)
4.5 9.0 10.0 10.0 ns
-40 to 85°C -55 to 125°C
Unit
CAPACITIVE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0
5.0 3 pF
= 10MHz
f
IN
T
A
Min. Typ. Max. Min. Max. Min. Max.
31 pF
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/4 (per gate)
CC(opr)
Unit
3/8
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