SGS Thomson Microelectronics 74ACT244 Datasheet

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74ACT244

OCTAL BUS BUFFER

WITH 3 STATE OUTPUTS (NON INVERTED)

■ HIGH SPEED:t

■

LOW POWERDISSIPATION: I

=8 µA(MAX.) at TA=25oC

CC

■

COMPATIBLEWITH TTL OUTPUTS V

=2V(MIN),VIL=0.8V(MAX)

IH

■ 50Ω TRANSMISSIONLINEDRIVING

=4.5ns (TYP.)atVCC=5V

PD

CAPABILITY

■ SYMMETRICAL OUTPUTIMPEDANCE:

|I

|=IOL=24 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■

OPERATINGVOLTAGERAN GE: V

(OPR)= 4.5Vto 5.5V

CC

■ PINANDFUNCTION COMPATIBLEWITH

74SERIES244

■ IMPROVEDLATCH-UPIMMUNITY

DESCRIPTION

The ACT244 is an advanced CMOS OCTAL BUS BUFFER (3-STATE) fabricated with sub-micron silicon gate and double-layermetal wiring C

2

MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalentBipolar Schottky TTL.

M

(Micro Package)

B

(PlasticPackage)

ORDER CODES:

74ACT244B

74ACT244M

(TSSOPPackage)

T

74ACT244T

G control output governsfourBUS BUFFERs. This device is desibned to be used with 3 state

memoryaddressdrivers, etc. The device is designed to interface directly High Speed CMOS systems with TTL, NMOS and CMOSoutputvoltage levels.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

February 1999

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74ACT244

INPUT AND OUTPUT EQUIVALENTCIRCUIT

TRUTH TABLE

INPUT OUTPU T

GAnYn

LLL LHH

HXZ

X:”H” or”L” Z:Highimpedance

PIN DESCRIPTION

PI N No SYM BO L NAM E AN D FUNCTION

1 1G Output Enable Input 2,4,6,8 1A1to1A4 Data Inputs 9,7,5,3 2Y1to2Y4 Data Outputs

11,13,15,17 2A1to2A4 Data Inputs 18,16,14,12 1Y1to1Y4 Data Outputs

19 2G Output Enabel Input 10 GND Ground (0V) 20 V

Positive Supply Voltage

CC

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

I

OK

I

orI

I

CC

T

AbsoluteMaximumRatingsarethosevaluesbeyond whichdamagetothedevice mayoccur. Functionaloperationunderthese condition isnotimplied.

Supply Voltage -0.5to+7 V

CC

DC Input Voltage -0.5toVCC+0.5 V

I

DC Output Voltage -0.5toVCC+0.5 V

O

DC Input Diode Current ±20 mA

IK

DC Output Diode Current ±20 mA DC Output Current ±50 mA

O

DC VCCor Ground Current ±400 mA

GND

Storage Temperature -65to+150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDED OPERATING CONDITIONS

Symb o l Parameter Val u e Uni t

V

T

dt/dv Input Rise and Fall Time V

1)VINfrom0.8V to2.0V

Supply Voltage 4.5to5.5 V

CC

Input Voltage 0toV

I

Output Voltage 0toV

O

Operating Temperature: -40to+85

op

= 4.5 to 5.5V (note 1) 8 ns/V

CC

CC CC

V V

o

C

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74ACT244

DC SPECIFICATIONS

Symbol Parameter Test Conditions Value Unit

T

V

CC

(V)

High Level Input Voltage 4.5 VO=0.1V or

V

IH

5.5 2.0 1.5 2.0

Low Level Input Voltage 4.5 VO=0.1V or

V

IL

5.5 1.5 0.8 0.8

High Level Output

V

OH

Voltage

4.5

5.5 I

V

4.5 I

5.5 I

Low Level Output

V

OL

Voltage

4.5

5.5 I

V

4.5 I

5.5 I

Input Leakage Current 5.5 VI=VCCorGND ±0.1 ±1 µA

I

3 State Output Leakage

I

OZ

5.5 VI=VIHorV

Current Max ICC/Input 5.5 VI=VCC-2.1V 0.6 1.5 mA

I

CCT

Quiescent Supply

I

CC

5.5 VI=VCCorGND 8 80 µA

-0.1V

V

CC

V

-0.1V

CC

IO=-50µA 4.4 4.49 4.4

(*)

=

I

or

IH

V

IL

(*)

I

or

IH

V

IL

=-50µA 5.4 5.49 5.4

O

=-24 mA 3.86 3.76

O

=-24 mA 4.86 4.76

O

IO=50µA 0.001 0.1 0.1

=

=50mA 0.001 0.1 0.1

O

=24mA 0.36 0.44

O

=24mA 0.36 0.44

O

IL

VO=VCCorGND

Current Dynamic Output Current

I

OLD

(note 1, 2)

I

OHD

1) Maximum test duration 2ms, one output loaded attime

2)Incidentwave switchingisguaranteed ontransmission lineswithimpedances aslowas 50 Ω. (*)All outputs loaded.

5.5 V

=1.65V max 75 mA

OLD

V

=3.85V min -75 mA

OHD

=25oC -40 t o 85oC

A

Min. Typ. Max. Min. Max.

2.0 1.5 2.0

1.5 0.8 0.8

±0.5 ±5 µA

V

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