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HEX D-TYPE FLIP FLOP WITH CLEAR
■ HIGH SPEED:
=200MHz (TYP.)atVCC=5V
f
MAX
■ LOWPOWERDISSIPATION:
=8µA (MAX.)at TA=25oC
I
CC
■ COMPATIBLEWITH TTL OUTPUT S
V
=2V(MIN),VIL= 0.8V (MAX)
IH
■ 50Ω TRANSMISSION LINE DRIVING
CAPABILITY
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=24mA (MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
≅ t
t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5V to5.5V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
74SERIES174
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The ACT174 is an high-speed CMOS HEX
D-TYPE FLIP FLOP WITH CLEAR fabricated
with sub-micron silicon gate and double-layer
metal wiring C
power applications mantaining high speed
operation similar to eqivalent Bipolar Schottky
2
MOS technology. It is ideal for low
74ACT174
PRELIMINARY DATA
B
(Plastic Package)
(Micro Package)
ORDERCODES:
74ACT174B 74ACT174M
TTL.
Information signals applied to D inputs are
transfered to the Q output on the positive going
edgeof theclockpulse.
Whenthe CLEARinput is held low, the Q outputs
are held low independentelyof the other inputs .
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOSoutput voltagelevels.
All inputs and outputs are equipped with
protectioncircuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
M
PINCONNECTION ANDIEC LOGICSYMBOLS
May 1997
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74ACT174
INPUTAND OUTPUT EQUIVALENTCIRCUIT
TRUTH TABLE
INP UT S OUT PUTS FUNCT ION
CLEAR D CLOCK Q
L X X L CLEAR
HL L
HH H
HX Q
X:Don’tCare
PIN DESCRIPTION
PI N No SYM B O L NAME AND FUNC T I ON
1 CLEAR Asyncronous Master Reset
(ActiveLOW)
2, 5, 7, 10,
12, 15
3, 4, 6, 11,
13, 14
9 CLOCK ClockInput(LOW-to-HIGH,
8 GND Ground (0V)
16 V
n
Q0 to Q5 Flip-FlopOutpus
D0 to D5 DataInputs
Edge-Triggered)
CC
PositiveSupply Voltage
NO CHANGE
LOGICDIAGRAM
This logic diagram has not be used to estimate propagation delays
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74ACT174
ABSOLUTE MAXIMUMRATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDEDOPERATINGCONDITIONS
Symbol Parameter Valu e Unit
V
V
V
T
dt/dv InputRise and Fall Time V
1) VINfrom0.8Vto2.0V
SupplyVoltage -0.5 to +7 V
CC
DC InputVoltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC InputDiode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 50 mA
O
DC VCCorGround Current ± 300 mA
GND
Storage Temperature -65 to +150
stg
LeadTemperature (10 sec) 300
L
SupplyVoltage 4.5 to 5.5 V
CC
InputVoltage 0 to V
I
OutputVoltage 0 to V
O
Operating Temperature: -40to +85
op
=4.5 to 5.5V(note1) 8 ns/V
CC
CC
CC
o
C
o
C
V
V
o
C
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