The 74ACT16373 is an advanced high-speed
CMOS16-BIT D-TYPELATCH(3-STATE)
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS tecnology.
This 16 bit D-Type latch is controlled by two lat c h
enable inputs (LE) and two output enable inputs
(OE
). The dev ice can be used as two 8-bit latches
or one 16-bit latch.
While the LE input is held at a high level, the Q
outputs will follow the data inputs precisely. W hen
the LE is taken low, the Q outputs will be latched
precisely at the levels set up at the D inputs. While
the (OE
) input is low, the outputs will be in a
normal logic state (high or low logic level) and
while OE
is in high level the outputs will be in a
high impedance state.
This device is designed to interface directly High
Speed CMOS systems with TTL and NMOS
components.
All inputsand outpu tsare equippedwith
protection circuits against static discharge, giving
them 2KV ESD im munity and transient excess
voltage.
TSSOP
ORDER CODES
PACKAGETUBET & R
TSSOP74ACT16373TTR
PIN CONNECTION
1/10February 2003
74ACT16373
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
11OE
2, 3,5, 6,8,9,
11, 12
13,14,16,17,
19, 20, 22, 23
242OE
252LELatch Enable Input
36,35,33,32,
30, 29, 27, 26
47,46,44,43,
41, 40, 38, 37
481LELatch Enable Input
4, 10, 15, 21,
28, 34, 39, 45
7, 18, 31, 42V
1Q0 to 1Q7 3-State Outputs
2Q0 to 2Q7 3-State Outputs
2D0 to 2D7 Data Inputs
1D0 to 1D7 Data Inputs
GNDGround (0V)
CC
3 State Output Enable
Input (Active LOW)
3 State Output Enable
Input (Active LOW)
Positive Supply Voltage
TRUTH TABLE
INPUTSOUTPUT
OE
HXXZ
LLXNO CHANGE *
LHLL
LHH H
X : Don‘tCare
Z : High Impedance
* : Q outputs are latched atthetimewhenthe LEinputistakenlow
logic level.
LEDQ
IEC LOGIC SYMBOLS
2/10
LOGIC DIAGRAM
This logic diagram has not to be used to estimate propagation delays
ABSOLUTE MAXIMUM RATINGS
74ACT16373
SymbolParameterValueUnit
V
V
V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage-0.5 to VCC+ 0.5
I
DC Output Voltage-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7V
V
V
± 20mA
± 20mA
± 50mA
± 400mA
-65 to +150°C
300°C
3/10
74ACT16373
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dv
1) VINfrom0.8V to 2.0V
DC SPECIFICATIONS
SymbolParameter
V
IH
V
IL
V
OH
V
OL
I
I
I
OZ
I
CCT
I
CC
I
OLD
I
OHD
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50Ω
Supply Voltage
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall Time V
= 4.5 to 5.5V (note 1)
CC
Test ConditionValue
= 25°C
T
A
Min.Typ. Max. Min. Max.Min. Max.
2.01.52.02.0
1.50.80.80.8
4.44.494.44.4
5.45.495.45.4
3.863.763.7
4.864.764.7
0.0010.10.10.1
0.0010.10.10.1
0.360.440.5
0.360.440.5
± 0.1± 1± 1µA
± 0.5± 5± 10µA
0.61.51.6mA
880160µA
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage Current
High Impedance
Output Leakege
Current
Max ICC/Input
Quiescent Supply
Current
Dynamic Output
Current (note 1, 2)
V
CC
(V)
4.5VO= 0.1 V or
-0.1V
V
CC
4.5VO= 0.1 V or
V
5.51.50.80.80.8
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
V
5.5
5.5
VO=VCCor GND
5.5
V
5.5
V
5.5
V
-0.1V
CC
IO=-50 µA
=-50 µA
I
O
=-24 mA
I
O
=-24 mA
I
O
IO=50 µA
=50 µA
I
O
=24 mA
I
O
=24 mA
I
O
I=VIH
or GND
orV
I=VCC
V
VI=VCC- 2.1V
I=VCC
OLD
OHD
or GND
= 1.65 V max
= 3.85 V min
IL
4.5 to 5.5V
CC
CC
-55 to 125°C
8ns/V
-40 to 85°C -55 to 125°C
7550mA
-75-50mA
V
V
Unit
V5.52.01.52.02.0
V
V
4/10
AC ELECTRICAL CHARACTERISTICS (CL=50pF,RL= 500 Ω, Input tr=tf=3ns)
Test ConditionValue
= 25°C
SymbolParameter
t
t
t
t
t
t
PZH
t
t
PHZ
t
W(H)
(*) Voltage range is 5.0V± 0.5V
Propagation Delay
PLH
Time LE to Q
PHL
Propagation Delay
PLH
Time D to Q
PHL
Output Enable
PZL
Time
Output Disable
PLZ
Time
LE Minimum Pulse
Width HIGH
Setup Time D to
t
s
LE, HIGH or LOW
Hold Time D to LE,
t
h
HIGH or LOW
V
(V)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
CC
T
A
Min.Typ. Max. Min. Max.Min. Max.
(*)
4.26.512.813.7
5.07.712.213.0
(*)
4.16.311.111.8
5.38.512.313.0
(*)
5.76.514.215.1
5.07.712.113.0
(*)
5.68.29.49.8
5.07.010.711.0
(*)
(*)
(*)
2.21.72.62.6
1.2<1.01.41.4
1.3<1.01.61.6
-40 to 85°C -55 to 125°C
74ACT16373
Unit
ns
ns
ns
ns
ns
ns
ns
CAPACITIVE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
V
CC
(V)
C
C
C
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
circuit)
Input Capacitance
IN
Output Capaci-
OUT
tance
Power Dissipation
PD
Capacitance (note1)5.0
5.03.5pF
5.011pF
= 10MHz
f
IN
T
A
Min.Typ. Max. Min. Max.Min. Max.
31pF
-40 to 85°C -55 to 125°C
CC(opr)=CPDxVCCxfIN+ICC
Unit
/16 (per
5/10
74ACT16373
TEST CIRCUIT
TestSwitch
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL= 50pF or equivalent (includes jig and probe capacitance)
R
=500Ωor equivalent
L=R1
R
T=ZOUT
of pulse generator (typically 50Ω)
Open
2V
CC
GND
WAVEFORM 1: PRO PAGAT ION DELAYS, PULSE WIDTH, SETUP AND HOLD TIMES (f=1MHz; 50%
duty cycle)
6/10
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 5 0% duty cycle)
74ACT16373
WAVEFORM 3: PROPAGATION DELAYS TIME (f=1MHz; 50% duty cycle)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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