SGS Thomson Microelectronics 74ACT14TTR, 74ACT14MTR, 74ACT14M, 74ACT14B Datasheet
74ACT14
HEX SCHMITT INVERTER
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 4µA(MAX.) at TA=25°C
CC
■ 50Ω TRANSMISSION LINE DRIVING
= 7.2 ns (TYP.) at VCC = 5V
PD
CAPABILITY
■ SYMMETRICAL OUTPUT IMPED ANCE:
|I
| = IOL = 24mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ OPERATING VOLTAGE RANGE:
V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
PHL
(OPR) = 2V to 5.5V
74 SERIES 14
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74ACT14 is an advanced high-speed CMOS
HEX SCHMITT INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS tecnology.
The internal circuit is composed of 3 stages
including buffer output , which enables high noise
immunity and stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP 74ACT14B
SOP 74ACT14M 74ACT14MTR
TSSOP 74ACT14TTR
CMOS output voltage levels.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fall input signals.
All inputs and outputs are equipped w ith protection circuits a gainst static discharge, giving them
2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8April 2001
74ACT14
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
2, 4, 6, 8, 10,
12
7 GND Ground (0V)
14
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
1A to 6A Data Inputs
1Y to 6Y Data Outputs
V
CC
Positive Supply Voltage
AY
LH
HL
-0.5 to +7 V
V
V
± 20 mA
± 20 mA
± 50 mA
± 300 mA
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
1) VIN from 0.8V to 2.0V
2/8
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
4.5 to 5.5 V
CC
CC
-55 to 125 °C
V
V
DC SPECIFICATIONS
Test Condition Value
= 25°C
Symbol Parameter
V
CC
(V)
V
High Level Input
t+
Voltage
V
Low Level Input
t-
Voltage
V
Hysteresis Voltage
h
V
V
I
I
I
OLD
I
OHD
1) Maxim um test duration 2ms, one output loaded at time
2) Incid ent wave sw i tc hi ng is guara nt e ed on transmi s sion line s with impedances as low as 50Ω
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage Cur-
I
rent
Max ICC/Input
CCT
Quiescent Supply
CC
Current
Dynamic Output
Current (note 1, 2)
4.5 2.0 2.0 2.0
5.5 2.0 2.0 2.0
4.5 0.6 0.6 0.6
5.5 0.6 0.6 0.6
4.5 0.4 1.4 0.4 1.4 0.4 1.4
5.5 0.4 1.5 0.4 1.5 0.4 1.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
5.5
5.5
5.5
5.5
IO=-50 µA
I
=-50 µA
O
I
=-24 mA
O
I
=-24 mA
O
=50 µA
I
O
I
=50 µA
O
I
=24 mA
O
I
=24 mA
O
= VCC or GND
V
I
VI = VCC - 2.1V
= VCC or GND
V
I
= 1.65 V max
V
OLD
V
= 3.85 V min
OHD
T
A
Min. Typ. Max. Min. Max. Min. Max.
4.4 4.49 4.4 4.4
5.4 5.49 5.4 5.4
3.86 3.76 3.7
4.86 4.76 4.7
0.001 0.1 0.1 0.1
0.001 0.1 0.1 0.1
0.36 0.44 0.5
0.36 0.44 0.5
± 0.1 ± 1 ± 1 µA
0.6 1.5 1.6 mA
44040µA
74ACT14
-40 to 85°C -55 to 125°C
75 50 mA
-75 -50 mA
Unit
V
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf = 3ns)
Test Condition Value
= 25°C
Symbol Parameter
t
PLH tPHL
(*) Vol tage range is 5. 0V ± 0.5V
Propagation Delay
Time
V
5.0
CC
(V)
(*)
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
7.2 11.4 14.0 14.0 ns
Unit
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0
5.0 5101010pF
= 10MHz
f
IN
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
30 pF
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/6 (per gate)
CC(opr)
Unit
3/8
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