SGS Thomson Microelectronics 74ACT14 Datasheet



74ACT14

HEX SCHMITT INVERTER

■ HIGHSPEED:t

■

LOW POWER DISSIPATION: I

=4 µA (MAX.)at TA=25oC

CC

■

50ΩTRANSMISSIONLINEDRIVING

=5ns (TYP.)atVCC=5V

PD

CAPABILITY

■ SYMMETRICALOUTPUTIMPEDANCE:

|=IOL=24mA(MIN)

|I

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERANGE:

V

(OPR)= 2Vto5V

CC

■

PINANDFUNCTIONCOMPATIBLEWITH 74SERIES14

■ IMPROVEDLATCH-UPIMMUNITY

DESCRIPTION

The ACT14 is an advanced high-speed CMOS HEX SCHMITT INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar Shottky TTL.

The internal circuit is composed of 3 stages including buffer output, which enables high noise

B

(PlasticPackage)

(Micro Package)

M

ORDERCODES :

74ACT14B 74ACT14M

immunityand stableoutput. The device is designed to interface directly High

Speed CMOS systems with TTL, NMOS and CMOSoutput voltagelevels

This together with its schmitt trigger function allows it to be used on line receivers with slow rise/fallinput signals.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGICSYMBOLS

March 1999

1/7

74ACT14

INPUT AND OUTPUTEQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FUNCT I O N

1, 3, 5, 9,

1A to 6A Data Inputs

11, 13

2, 4, 6, 8,

1Y to 6Y Data Outputs

10, 12

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

AY

LH

HL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

I

OK

I

or I

I

CC

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 300 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

20 mA

±

20 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Para met er Value Un it

V

T

2/7

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: -40 to +85

op

CC CC

V V

o

C

74ACT14

DC SPECIFICATIONS

Symbol Parameter Test Conditions Value Unit

T

V

CC

(V)

High Level Input Voltage 4.5 2.0 2.0

V

t+

5.5 2.0 2.0

Low Level Input Voltage 4.5 0.6 0.6

V

t-

5.5 0.6 0.6

Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4

V

h

5.5 0.4 1.5 0.4 1.5

High Level Output

V

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current

I

Max ICC/Input 5.5 VI=VCC-2.1V 0.6 1.5 mA

I

CCT

Quiescent Supply

I

CC

4.5

5.5 I

4.5 I

V

I

V

IH

V

5.5 I

4.5

5.5 I

4.5 I

V

I

V

IH

V

5.5 I

5.5

VI=VCCor GND

IO=-50 µA 4.4 4.49 4.4

(*)

=

=-50µA 5.4 5.49 5.4

O

or

IL

(*)

IL

=-24 mA 3.86 3.76

O

=-24 mA 4.86 4.76

O

IO=50 µA 0.001 0.1 0.1

=

=50 mA 0.001 0.1 0.1

O

or

=24 mA 0.36 0.44

O

=24 mA 0.36 0.44

O

5.5 VI=VCCor GND 4 40 µA

Current Dynamic Output Current

I

OLD

OHD

(note 1, 2)

I

1) Maximumtest duration 2ms, one output loaded at time

2)Incident waveswitchingisguaranteed ontransmission lineswithimpedancesaslow as50Ω. (*)All outputs loaded.

5.5 V

= 1.65 V max 75 mA

OLD

V

= 3.85 V min -75 mA

OHD

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

0.1

±

1

±

µ

V

A

AC ELECTRICAL CHARACTERISTICS

= 50 pF,RL= 500 Ω, Input tr=tf=3 ns)

(C

L

Symbol Parameter Test Condition Value Unit

t

Propagation Delay Time 5.0

PLH

t

PHL

(*) Voltagerangeis 5V± 0.5V

V

(V)

CC

(*)

T

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

7.2 11.4 13.0 ns

3/7