SGS Thomson Microelectronics 74ACT125 Datasheet

QUAD BUS BUFFERS (3-STATE)

■ HIGH SPEED: t

■ LOWPOWER DISSIPATION:

=8µA (MAX.) at TA=25oC

I

CC

■ COMPATIBLEWITHTTLOUTPUTS

V

=2V(MIN),VIL= 0.8V (MAX)

IH

■ 50Ω TRANSMISSION LINE DRIVING

CAPABILITY

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=24 mA (MIN)

OH

■ BALANCEDPROPAGATIONDELAY S:

t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERAN GE:

V

(OPR)= 4.5V to 5.5V

CC

■ PIN AND FUNCTION COMPATIBLEWITH

74SERIES125

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The ACT125 is an high-speedCMOSQUAD BUS BUFFERS fabricated with sub-micron silicongate and double-layer metal wiring C technology. It is ideal for low power applications maintaining high speed operation similar to

= 6.5 ns (TYP.) at VCC=5V

PD

2

MOS

74ACT125

PRELIMINARY DATA

B

(Plastic Package)

(Micro Package)

ORDERCODES:

74ACT125B 74ACT125M

equivalentBipolarSchottky TTL. These devices require the same 3-STATEcontrol

input G to be taken high to make the output go in to the high impedancestate.

The device is designed to interface directly High Speed CMOS systems with TTL, NMOS and CMOSoutput voltage levels.

All inputs and outputs are equipped with protectioncircuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

M

PINCONNECTION AND IEC LOGIC SYMBOLS

May 1997

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74ACT125

INPUTAND OUTPUTEQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYM B O L NAME AN D FUNCT I ON

1, 4, 10, 13 G1 to G4 Output Enable Inputs

2, 5, 9, 12 A1 to A4 Data Inputs

3, 6, 8, 11 Y1 to Y4 Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTHTABLE

AGY

XHZ

LLL

HLH

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

I

OK

I

orI

I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnot implied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current ± 20 mA

IK

DC Output Diode Current ± 20 mA DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 200 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symbol Parameter Valu e Unit

V

T

dt/dv Input Rise and Fall Time V

1) VINfrom0.8V to2.0V

2/8

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: -40 to +85

op

= 4.5 to 5.5V (note 1) 8 ns/V

CC

CC CC

V V

o

C

DC SPECIFICATIONS

74ACT125

Symbol Parameter Test Condition s Value Unit

T

V

CC

(V)

High Level Input Voltage 4.5 VO= 0.1 V or

V

IH

5.5 2.0 1.5 2.0

Low Level Input Voltage 4.5 VO= 0.1 V or

V

IL

5.5 1.5 0.8 0.8

High Level Output

V

OH

Voltage

4.5

5.5 I

4.5 I

5.5 I

Low Level Output

V

OL

Voltage

4.5

5.5 I

4.5 I

5.5 I

Input Leakage Current

I

3 State Output Leakage

I

OZ

5.5

5.5 VI=VIHor V

Current Max ICC/Input 5.5 VI=VCC-2.1 V 0.6 1.5 mA

I

CCT

Quiescent Supply

I

CC

5.5 VI=VCCor GND 8 80 µA

V

- 0.1 V

CC

- 0.1 V

V

CC

IO=-50 µA 4.4 4.49 4.4

(*)

=

V

I

V

IH

V

IL

(*)

V

I

V

IH

V

IL

=-50 µA 5.4 5.49 5.4

O

or

=-24 mA 3.86 3.76

O

=-24 mA 4.86 4.76

O

IO=50 µA 0.001 0.1 0.1

=

=50 mA 0.001 0.1 0.1

O

or

=24 mA 0.36 0.44

O

=24 mA 0.36 0.44

O

VI=VCCor GND ±0.1 ±1 µA

VO=VCCor GND

IL

=25oC-40to85

A

Min. Typ. Ma x. Min. Max.

2.0 1.5 2.0

1.5 0.8 0.8

±0.5 ±5 µA

o

C

Current Dynamic Output Current

I

OLD

OHD

(note 1, 2)

I

1) Maximum test duration 2ms, one output loaded at time

2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω. (*)All outputs loaded.

5.5 V

= 1.65 Vmax 75 mA

OLD

V

= 3.85 V min -75 mA

OHD

V

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