SGS Thomson Microelectronics 74ACT11TTR, 74ACT11MTR, 74ACT11M, 74ACT11B Datasheet
1/8April 2001
■ HIGH SPEED: t
PD
= 4.5ns (TYP.) at VCC = 5V
■ LOW POWER DISSIPATION:
I
CC
= 2µA(MAX.) at TA=25°C
■ COMPA TIBLE WITH TTL OUTPUTS
V
IH
= 2V (MIN.), VIL = 0.8V (MAX.)
■ 50Ω TRANSMISSION LINE DRIVING
CAPABILITY
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = IOL = 24mA (MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 11
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74ACT11 is an advanced high-speed CMOS
TRIPLE 3-INPUT AND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS tecnology.
The internal circuit is composed of 4 stages
including buffer output , which enables high noise
immunity and stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOS output voltage levels.
All inputs and outputs are equipped w ith protection circuits a gainst static discharge, giving them
2KV ESD immunity and transient excess voltage.
74ACT11
TRIPLE 3-INPUT AND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
DIP 74ACT11B
SOP 74ACT11M 74ACT11MTR
TSSOP 74ACT11TTR
TSSOPDIP SOP
74ACT11
2/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
X : Don’t Care
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) VIN from 0.8V to 2.0V
PIN No SYMBOL NAME AND FUNCTION
1, 3, 9 1A to 3A Data Inputs
2, 4, 10 1B to 3B Data Inputs
13, 5, 11 1C to 3C Data Inputs
12, 6, 8 1Y to 3Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
ABCY
LXXL
XLXL
XXLL
HHHH
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7 V
V
I
DC Input Voltage -0.5 to VCC + 0.5
V
V
O
DC Output Voltage -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
± 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 50 mA
I
CC
or I
GND
DC VCC or Ground Current
± 150 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage 0 to V
CC
V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time V
CC
= 4.5 to 5.5V (note 1)
8 ns/V
74ACT11
3/8
DC SPECIFICATIONS
1) Maxim um test duration 2ms, one output loaded at tim e
2) Incid ent wave switching is guaranteed on transmission l i nes with impe dances as low as 50Ω
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf = 3ns)
(*) Vol tage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= CPD x VCC x fIN + ICC/3 (per gate)
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
4.5 VO = 0.1 V or
V
CC
-0.1V
2.0 1.5 2.0 2.0
V5.5 2.0 1.5 2.0 2.0
V
IL
Low Level Input
Voltage
4.5 VO = 0.1 V or
V
CC
-0.1V
1.5 0.8 0.8 0.8
5.5 1.5 0.8 0.8 0.8
V
V
OH
High Level Output
Voltage
4.5
I
O
=-50 µA
4.4 4.49 4.4 4.4
5.5
I
O
=-50 µA
5.4 5.49 5.4 5.4
4.5
I
O
=-24 mA
3.86 3.76 3.7
V
5.5
I
O
=-24 mA
4.86 4.76 4.7
V
OL
Low Level Output
Voltage
4.5
I
O
=50 µA
0.001 0.1 0.1 0.1
5.5
I
O
=50 µA
0.001 0.1 0.1 0.1
4.5
I
O
=24 mA
0.36 0.44 0.5
5.5
I
O
=24 mA
0.36 0.44 0.5
I
I
Input Leakage Current
5.5
V
I
= VCC or GND
± 0.1 ± 1 ± 1 µA
I
CCT
Max ICC/Input
5.5
VI = VCC - 2.1V
0.6 1.5 1.6 mA
I
CC
Quiescent Supply
Current
5.5
V
I
= VCC or GND
22040µA
I
OLD
Dynamic Output
Current (note 1, 2)
5.5
V
OLD
= 1.65 V max
75 50 mA
I
OHD
V
OHD
= 3.85 V min
-75 -50 mA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH tPHL
Propagation Delay
Time
5.0
(*)
1.5 4.5 9.5 1.0 9.5 1.0 10.5 ns
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
5.0 4.0 pF
C
PD
Power Dissipation
Capacitance (note 1)5.0
f
IN
= 10MHz
37 pF
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