SGS Thomson Microelectronics 74ACT10TTR, 74ACT10MTR, 74ACT10M Datasheet

1/8April 2001

■ HIGH SPEED: t

PD

= 4.5ns (TYP.) at VCC = 5V

■ LOW POWER DISSIPATION:

I

CC

= 4µA(MAX.) at TA=25°C

■ COMPA TIBLE WITH TTL OUTPUTS

V

IH

= 2V (MIN.), VIL = 0.8V (MAX.)

■ 50Ω TRANSMISSION LINE DRIVING

CAPABILITY

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

| = IOL = 24mA (MIN)

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANGE:

V

CC

(OPR) = 4.5V to 5.5V

■ PIN AND FUNCTION COMPATIBLE WITH

74 SERIES 10

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS tecnology. The internal circuit is composed of 3 stages including buffer output , which enables high noise immunity and stable output.

The device is designed to interface directly High Speed CMOS systems with TTL, NMOS and CMOS output voltage levels. All inputs and outputs are equipped w ith protection circuits a gainst static discharge, giving them 2KV ESD immunity and transient excess voltage.

74ACT10

TRIPLE 3-INPUT NAND GATE

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE TUBE T & R

DIP 74ACT10B

SOP 74ACT10M 74ACT10MTR

TSSOP 74ACT10TTR

TSSOPDIP SOP

74ACT10

2/8

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

X : Don’t Care

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

RECOMMENDED OPERATING CONDITIONS

1) VIN from 0.8V to 2.0V

PIN No SYMBOL NAME AND FUNCTION

1, 3, 9 1A to 3A Data Inputs

2, 4, 10 1B to 3B Data Inputs

13, 5, 11 1C to 3C Data Inputs

12, 6, 8 1Y to 3Y Data Outputs

7 GND Ground (0V)

14

V

CC

Positive Supply Voltage

ABCY

LXXH XLXH XXLH HHHL

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7 V

V

I

DC Input Voltage -0.5 to VCC + 0.5

V

O

DC Output Voltage -0.5 to VCC + 0.5

V

I

IK

DC Input Diode Current

± 20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 50 mA

I

CC

or I

GND

DC VCC or Ground Current

± 150 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

300 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

4.5 to 5.5 V

V

I

Input Voltage 0 to V

CC

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

dt/dv

Input Rise and Fall Time V

CC

= 4.5 to 5.5V (note 1)

8 ns/V

74ACT10

3/8

DC SPECIFICATIONS

1) Maxim um test duration 2ms, one output loaded at tim e

2) Incid ent wave switching is guaranteed on trasmission l in es with imped ances as low as 50Ω

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf = 3ns)

(*) Vol tage range is 5.0V ± 0.5V

CAPACITIVE CHARACTERISTICS

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

CC(opr)

= CPD x VCC x fIN + ICC/3 (per gate)

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input Voltage

4.5 VO = 0.1 V or V

CC

-0.1V

2.0 1.5 2.0 2.0 V5.5 2.0 1.5 2.0 2.0

V

IL

Low Level Input Voltage

4.5 VO = 0.1 V or V

CC

-0.1V

1.5 0.8 0.8 0.8

5.5 1.5 0.8 0.8 0.8

V

OH

High Level Output Voltage

4.5

IO=-50 µA

4.4 4.49 4.4 4.4

5.5

I

O

=-50 µA

5.4 5.49 5.4 5.4

4.5

I

O

=-24 mA

3.86 3.76 3.7

V

5.5

I

O

=-24 mA

4.86 4.76 4.7

V

OL

Low Level Output Voltage

4.5

IO=50 µA

0.001 0.1 0.1 0.1

5.5

I

O

=50 µA

0.001 0.1 0.1 0.1

4.5

I

O

=24 mA

0.36 0.44 0.5

5.5

I

O

=24 mA

0.36 0.44 0.5

I

Input Leakage Current

5.5

V

I

= VCC or GND

± 0.1 ± 1 ± 1 µA

I

CCT

Max ICC/Input

5.5

VI = VCC - 2.1V

0.6 1.5 1.6 mA

I

CC

Quiescent Supply Current

5.5

V

I

= VCC or GND

44080µA

I

OLD

Dynamic Output Current (note 1, 2)

5.5

V

OLD

= 1.65 V max

75 50 mA

I

OHD

V

OHD

= 3.85 V min

-75 -50 mA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLH tPHL

Propagation Delay Time

5.0

(*)

1.5 4.5 9.0 1.0 10.0 1.0 10.0 ns

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

5.0 4.0 pF

C

PD

Power Dissipation Capacitance (note 1)5.0

f

IN

= 10MHz

37.0 pF