SGS Thomson Microelectronics 74ACT10 Datasheet
■ HIGH SPEED:t
■ LOWPOWERDISSIPATION:
=4µA (MAX.) at TA=25oC
I
CC
■ COMPATIBLEWITH TTL OUTPUT S
V
=2V(MIN), VIL= 0.8V (MAX)
IH
■ 50Ω TRANSMISSION LINE DRIVING
= 6.5 ns (TYP.)at VCC=5V
PD
CAPABILITY
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=24 mA (MIN)
OH
■ BALANCEDPROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5V to 5.5V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
74SERIES10
■ IMPROVED LATCH-UPIMMUNITY
DESCRIPTION
The ACT10 is an advanced high-speed CMOS
TRIPLE 3-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for low
power applications mantaining high speed
74ACT10
TRIPLE 3-INPUT NAND GATE
PRELIMINARY DATA
B
(Plastic Package)
(Micro Package)
ORDERCODES:
74ACT10B 74ACT10M
operation similar to equivalent Bipolar Schottky
TTL.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunityand stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOSoutput voltagelevels.
All inputs and outputs are equipped with
protectioncircuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
M
PINCONNECTION ANDIEC LOGICSYMBOLS
May 1997
1/7
74ACT10
INPUTAND OUTPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM B O L NAME AND FUNC TI ON
1, 3, 9 1A to 3A Data Inputs
2, 4, 10 1B to 3B Data Inputs
13, 5, 11 1C to 3C Data Inputs
12, 6, 8 1Y to 3Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTHTABLE
ABCY
LXXH
XLXH
XXLH
HHHL
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
Supply Voltage -0.5 to +7 V
CC
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 150 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symbol Parameter Valu e Unit
V
V
V
T
dt/dv Input Rise and Fall Time V
1) VINfrom0.8V to2.0V
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: -40to +85
op
= 4.5 to 5.5V (note 1) 8 ns/V
CC
CC
CC
V
V
o
C
DC SPECIFICATIONS
74ACT10
Symbol Parameter Test Condition s Value Unit
=25oC-40to85
V
CC
(V)
High Level Input Voltage 4.5 VO= 0.1 V or
V
IH
5.5 2.0 1.5 2.0
Low Level Input Voltage 4.5 VO= 0.1 V or
V
IL
5.5 1.5 0.8 0.8
High Level Output
V
OH
Voltage
4.5
5.5 I
4.5 I
5.5 I
Low Level Output
V
OL
Voltage
4.5
5.5 I
4.5 I
5.5 I
Input Leakage Current
I
I
Max ICC/Input 5.5 VI=VCC-2.1 V 0.6 1.5 mA
I
CCT
Quiescent Supply
I
CC
5.5
5.5 VI=VCCor GND 4 40 µA
V
- 0.1 V
CC
- 0.1 V
V
CC
IO=-50 µA 4.4 4.49 4.4
(*)
=
V
I
V
IH
V
IL
(*)
V
I
V
IH
V
IL
=-50 µA 5.4 5.49 5.4
O
or
=-24 mA 3.86 3.76
O
=-24 mA 4.86 4.76
O
IO=50 µA 0.001 0.1 0.1
=
=50 mA 0.001 0.1 0.1
O
or
=24 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
VI=VCCor GND ±0.1 ±1 µA
T
A
Min. Typ. Max. Min . Max.
2.0 1.5 2.0
1.5 0.8 0.8
o
C
Current
Dynamic Output Current
I
OLD
OHD
(note 1, 2)
I
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω.
(*)All outputs loaded.
5.5 V
= 1.65 Vmax 75 mA
OLD
V
= 3.85 V min -75 mA
OHD
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Inputtr=tf=3ns)
Symbol Parameter Test Cond ition Value Unit
t
Propagation Delay Time 5.0
PLH
t
PHL
(*) Voltagerangeis5V ± 0.5V
V
(V)
CC
(*)
=25oC-40to85
T
A
Min. Typ. Max. Min . Max.
1.5 6.5 9.0 1.0 9.5 ns
o
C
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Condition s Value Unit
=25oC-40to85
T
A
Min. Typ. Max. Min . Max.
4.5
Input Capacitance
C
IN
Power Dissipation
C
PD
V
CC
(V)
5.0
5.0 25 pF
Capacitance (note 1)
1) CPDis defined as the value of the IC’s internalequivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. I
(opr) = CPD• VCC• fIN+ICC/n (per circuit)
CC
o
C
pF
3/7
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