SGS Thomson Microelectronics 74ACT02 Datasheet

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74ACT02

QUAD 2-INPUT NOR GATE

■ HIGHSPEED:t

■

LOW POWER DISSIPATION: I

=4 µA (MAX.)at TA=25oC

CC

■

COMPATIBLEWITHTTLOUTPUTS V

=2V(MIN),VIL=0.8V(MAX)

IH

■ 50Ω TRANSMISSIONLINEDRIVING

=5ns (TYP.)atVCC=5V

PD

CAPABILITY

■ SYMMETRICALOUTPUTIMPEDANCE:

|I

|=IOL=24mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■

OPERATINGVOLTAGERANGE: V

(OPR)= 4.5V to5.5V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

74SERIES02

■ IMPROVEDLATCH-UPIMMUNITY

DESCRIPTION

The ACT02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL.

DIP

ORDER CODES

PACKAGE TUBE T & R

DIP M74ACT02B

SOP M74ACT02M M74ACT02MTR

TSSOP M74ACT02TTR

SOP

TSSOP

The internal circuit is composed of 3 stages including buffer output, which enables high noise immunityand stable output.

The device is designed to interface directly High Speed CMOS systems with TTL, NMOS and CMOSoutput voltagelevels.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

May 2000

1/8

74ACT02

INPUT AND OUTPUT EQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYMB OL NAME AND FU NCTIO N

2, 5, 8, 11 1A to 4A Data Inputs 3, 6, 9, 12 1B to 4B Data Inputs

1, 4, 10, 12 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTH TABLE

ABY

LLH

LHL HLL HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Val u e Uni t

V

I

OK

I

or I

I

CC

T

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperationunderthesecondition isnotimplied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current

IK

20 mA

±

DC Output Diode Current ± 20 mA DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 200 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDED OPERATING CONDITIONS

Symb o l Parameter Val u e Uni t

V

T

dt/dv Input Rise and Fall Time V

1)VINfrom0.8Vto 2.0V

2/8

Supply Voltage 4.5 to 5.5 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: -40 to +85

op

= 4.5 to 5.5V (note 1) 8 ns/V

CC

CC CC

V V

o

C

74ACT02

DC SPECIFICATIONS

Symbol Parameter Test Conditi ons Value Unit

T

V

CC

(V)

High Level Input Voltage 4.5 VO= 0.1V or

V

IH

5.5 2.0 1.5 2.0

Low Level Input Voltage 4.5 VO= 0.1V or

V

IL

5.5 1.5 0.8 0.8

High Level Output

V

OH

Voltage

4.5

5.5 I

V V

4.5 I

5.5 I

Low Level Output

V

OL

Voltage

4.5

5.5 I

V V

4.5 I

5.5 I

Input Leakage Current 5.5 VI=VCCor GND ±0.1 ±1 µA

I

Max ICC/Input 5.5 VI=VCC-2.1V 0.6 1.5 mA

I

CCT

Quiescent Supply

I

CC

5.5 VI=VCCor GND 4 40

-0.1 V

V

CC

V

-0.1 V

CC

IO=-50µA 4.4 4.49 4.4

(*)

=

I IH

V

IL

(*)

I IH

V

IL

=-50 µA 5.4 5.49 5.4

O

or

=-24 mA 3.86 3.76

O

=-24 mA 4.86 4.76

O

IO=50 µA 0.001 0.1 0.1

=

=50 mA 0.001 0.1 0.1

O

or

=24 mA 0.36 0.44

O

=24 mA 0.36 0.44

O

Current Dynamic Output Current

I

OLD

OHD

(note 1, 2)

I

1) Maximumtest duration 2ms, oneoutput loaded attime

2)Incident waveswitchingisguaranteed ontransmission lineswithimpedancesaslow as50 Ω. (*)All outputs loaded.

5.5 V

= 1.65 V max 75 mA

OLD

V

= 3.85 V min -75 mA

OHD

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

2.0 1.5 2.0

1.5 0.8 0.8

µ

V

A

AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL= 500 Ω, Inputtr=tf=3 ns)

Symbol Parameter Test Conditio n Value Unit

t

Propagation Delay Time 5.0

PLH

t

PHL

(*)Voltagerange is5V ± 0.5V

V

(V)

CC

(*)

T

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

1.5 5.0 8.0 1.0 9.0 ns

CAPACITIVE CHARACTERISTICS

Symbol Parameter Test Conditi ons Value Unit

V

CC

(V)

Input Capacitance 5.0 4

C

IN

Power Dissipation

C

PD

5.0 47 pF

Capacitance (note 1)

1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichiscalculatedfromtheoperatingcurrent consumption without load.(Referto TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I

(opr)= CPD• VCC• fIN+ICC/n(percircuit)

CC

T

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

pF

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