SGS Thomson Microelectronics 74AC86 Datasheet

■ HIGH SPEED: t

■ LOWPOWERDISSIPATION:

=4µA (MAX.) at TA=25oC

I

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ 50Ω TRANSMISSION LINE DRIVING

= 5.5 ns (TYP.) at VCC=3.3V

PD

=28%VCC(MIN.)

CAPABILITY

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=24mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAY S:

t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERAN GE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLEWITH

74SERIES86

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The LVQ86 is an advanced high-speed CMOS QUAD EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal

74AC86

QUAD EXCLUSIVE OR GATE

PRELIMINARY DATA

B

(Plastic Package)

(Micro Package)

ORDERCODES:

74AC86B 74AC86M

wiringC

2

MOStechnology. It is ideal for ow power applications mantaining high speed operation similarto equivalent Bipolar Schottky TTL.

The internal circuit is composed of 3 stages including buffer output, which enables high noise immunityand stabeoutput.

All inputs and outputs are equipped with protectioncircuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

M

PINCONNECTION AND IEC LOGIC SYMBOLS

April 1997

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74AC86

INPUTAND OUTPUTEQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYM B O L NAME AN D F UNC T I ON

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTHTABLE

ABY

LLL

LHH HLH HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

I

OK

I

orI

I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current ± 20 mA

IK

DC Output Diode Current ± 20 mA DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 200 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Parame t er Value Un i t

V

T

dt/dv Input Rise and Fall Time V

1) VINfrom30%to70%of V

2/7

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: -40 to +85

op

= 3.0, 4.5 or 5.5 V(note 1) 8 ns/V

CC

CC CC

V V

o

C

DC SPECIFICATIONS

74AC86

Symbol Parameter Test Condition s Value Unit

V

CC

(V)

High Level Input Voltage 3.0 VO= 0.1 V or

V

IH

4.5 3.15 2.25 3.15

V

CC

- 0.1 V

=25oC-40to85

T

A

Min. Typ. Ma x. Min. Max.

2.1 1.5 2.1

o

C

5.5 3.85 2.75 3.85

Low Level Input Voltage 3.0 VO= 0.1 V or

V

IL

4.5 2.25 1.35 1.35

V

CC

- 0.1 V

1.5 0.9 0.9

5.5 2.75 1.65 1.65

High Level Output

V

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current

I

Quiescent Supply

I

CC

3.0

4.5 I

5.5 I

V V

3.0 I

4.5 I

5.5 I

3.0

4.5 I

5.5 I

V V

3.0 I

4.5 I

5.5 I

5.5

IO=-50 µA 2.9 2.99 2.9

(*)

I IH

V

IL

=-50 µA 4.4 4.49 4.4

O

=

=-50 µA 5.4 5.49 5.4

or

O

=-12 mA 2.56 2.46

O

=-24 mA 3.86 3.76

O

=-24 mA 4.86 4.76

O

IO=50 µA 0.002 0.1 0.1

(*)

I IH

V

IL

=50 µA 0.001 0.1 0.1

O

=

=50 µA 0.001 0.1 0.1

or

O

=12 mA 0.36 0.44

O

=24 mA 0.36 0.44

O

=24 mA 0.36 0.44

O

VI=VCCor GND ±0.1 ±1 µA

5.5 VI=VCCor GND 4 40 µA

Current Dynamic Output Current

I

OLD

OHD

(note 1, 2)

I

1) Maximum test duration 2ms, one output loaded at time

2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω.

5.5 V

= 1.65 Vmax 75 mA

OLD

V

= 3.85 V min -75 mA

OHD

V

AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Input tr=tf=3ns)

Symbol Parameter Test Cond ition Value Unit

=25oC-40to85

T

A

Min. Typ. Ma x. Min. Max.

2 6 11.5 1 12.5

1.5 4.5 8.5 1 9

t

Propagation Delay Time 3.3

PLH

t

PHL

(*) Voltagerangeis 3.3V± 0.3V (**) Voltagerange is5V± 0.5V

V

(V)

5.0

CC

(*)

(**)

o

C

ns

CAPACITIVE CHARACTERISTICS

Symbol Parameter Test Condition s Value Unit

=25oC-40to85

T

A

Min. Typ. Ma x. Min. Max.

4

Input Capacitance

C

IN

Power Dissipation

C

PD

V

CC

(V)

5.0

5.0 28 pF

Capacitance (note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

(opr) =CPD• VCC• fIN+ICC/n (per circuit)

CC

o

C

pF

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