SGS Thomson Microelectronics 74AC541 Datasheet

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74AC541

OCTAL BUS BUFFER

WITH 3 STATE OUTPUTS (NON INVERTED)

■ HIGH SPEED:t

■

LOW POWERDISSIPATION: I

=8 µA(MAX.) at TA=25oC

CC

■

HIGH NOISEIMMUNITY: V

NIH=VNIL

■ 50Ω TRANSMISSIONLINEDRIVING

=28%VCC(MIN.)

=4ns(TYP.)atVCC=5V

PD

CAPABILITY

■ SYMMETRICAL OUTPUTIMPEDANCE:

|I

|=IOL=24 mA(MIN)

OH

■ BALANCEDPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■

OPERATINGVOLTAGERANGE: V

(OPR)= 2Vto 6V

CC

■ PINANDFUNCTIONCOMPATIBLEWITH

74SERIES541

■ IMPROVEDLATCH-UP IMMUNITY

DESCRIPTION

The AC541 is an advanced CMOS OCTAL BUS BUFFER (3-STATE) fabricated with sub-micron silicon gate and double-layermetal wiring C

2

MOS technology. It is ideal for low power applications mantaining high speed operation similar to

B

(PlasticPackage)

(Micro Package)

M

ORDERCODES :

74AC541B 74AC541M

equivalentBipolarSchottky TTL. The 3 STATE control gate operates as a two

input AND such that if eitherG1 and G2 are high, all eight outputs are in the high impedance state. In order to enhance PC board layout, the AC541 offers a pinout having inputs and outputs on opposite sidesof the package. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

November 1998

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74AC541

INPUT AND OUTPUT EQUIVALENT CIRCUIT

TRUTH TABLE

INPUT OUTPUT

G1 G2 An Yn

HXXZ XHXZ

LLHH LLLL

X:”H” or”L” Z:Highimpedance

PIN DESCRIPTION

PI N No SYM BO L NAM E AND F U NCTIO N

1,19 G1,G2 Output Enable Input

2,3,4,5,

6,7,8,9

18,17,16, 15,14,13,

12, 11

10 GND Ground (0V) 20 V

A1toA8 Data Inputs

Y1toY8 Data Outputs

Positive Supply Voltage

CC

ABSOLUTE MAXIMUM RATINGS

Symb o l P ara met er Val u e Uni t

V

I

OK

I

orI

I

CC

T

AbsoluteMaximumRatingsarethosevalues beyondwhichdamagetothedevicemayoccur.Functionaloperationunderthese condition isnotimplied.

Supply Voltage -0.5to+7 V

CC

DC Input Voltage -0.5toVCC+0.5 V

I

DC Output Voltage -0.5toVCC+0.5 V

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current ±50 mA

O

DC VCCor Ground Current ±400 mA

GND

Storage Temperature -65to+150

stg

Lead Temperature (10 sec) 300

L

20 mA

±

20 mA

±

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l P ara met er Value Un it

V

T

dt/dv Input Rise and Fall Time V

1)VINfrom30%to70%of V

Supply Voltage 2to6 V

CC

Input Voltage 0toV

I

Output Voltage 0toV

O

Operating Temperature: -40to+85

op

= 3.0, 4.5 or 5.5 V(note 1) 8 ns/V

CC

CC CC

V V

o

C

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74AC541

DC SPECIFICATIONS

Symbol Parameter Test Conditions Value Unit

T

V

CC

(V)

High Level Input Voltage 3.0 VO=0.1V or

V

IH

4.5 3.15 2.25 3.15

V

CC

-0.1V

5.5 3.85 2.75 3.85

Low Level Input Voltage 3.0 VO=0.1V or

V

IL

4.5 2.25 1.35 1.35

V

CC

-0.1V

5.5 2.75 1.65 1.65

High Level Output

V

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current 5.5 VI=VCCorGND ±0.1 ±1 µA

I

3 State Output Leakage

I

OZ

Current Quiescent Supply

I

CC

3.0

4.5 I

5.5 I

3.0 I

V

I

V

IH

V

4.5 I

5.5 I

3.0

4.5 I

5.5 I

3.0 I

V

I

V

IH

V

4.5 I

5.5 I

5.5 VI=VIHorV

IO=-50µA 2.9 2.99 2.9

(*)

or

IL

=-50µA 4.4 4.49 4.4

O

=

=-50µA 5.4 5.49 5.4

O

=-12 mA 2.56 2.46

O

=-24 mA 3.86 3.76

O

=-24 mA 4.86 4.76

O

IO=50µA 0.002 0.1 0.1

(*)

=

or

IL

=50µA 0.001 0.1 0.1

O

=50

µΑ

O

=12mA 0.36 0.44

O

=24mA 0.36 0.44

O

=24mA 0.36 0.44

O

IL

VO=VCCorGND

5.5 VI=VCCorGND 8 80 µA

Current Dynamic Output Current

I

OLD

(note 1, 2)

I

OHD

1) Maximum testduration 2ms,one output loaded attime

2)Incidentwaveswitchingisguaranteed ontransmissionlineswithimpedances aslowas50 Ω. (*)All outputs loaded.

5.5 V

=1.65V max 75 mA

OLD

V

=3.85V min -75 mA

OHD

=25oC -40 to 85oC

A

Min. Typ. Max. Min. Max.

2.1 1.5 2.1

1.5 0.9 0.9

0.001 0.1 0.1

0.5

±

5

±

µ

V

A

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