SGS Thomson Microelectronics 74AC04 Datasheet

74AC04

HEX INVERTER

■ HIGH SPEED: t

■ LOWPOWERDISSIPATION:

=4µA (MAX.)at TA=25oC

I

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ 50Ω TRANSMISSION LINE DRIVING

=4 ns (TYP.)atVCC=5V

PD

=28%VCC(MIN.)

CAPABILITY

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=24mA(MIN)

OH

■ BALANCE DPROPAGATIONDELAYS:

t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERAN GE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

74SERIES04

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The AC04 is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layermetal wiring C

2

MOS

B

(Plastic Package)

(Micro Package)

M

ORDERCODES:

74AC04B 74AC04M

technology. It is ideal for low power applications mantaining high speed operation similar to equivalentBipolarSchottky TTL.

The internal circuit is composed of 3 stages including buffer output, which enables high noise immunityand stable output.

All inputs and outputs are equipped with protectioncircuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

PINCONNECTION AND IEC LOGIC SYMBOLS

April 1997

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74AC04

INPUTAND OUTPUTEQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYM B O L NAME AN D FUNC T I ON

1, 3, 5, 9,

1A to 6A Data Inputs

11, 13

2, 4, 6, 8,

1Y to 6Y Data Oututs

10, 12

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTHTABLE

AY

LH

HL

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

I

OK

I

orI

I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current ± 20 mA

IK

DC Output Diode Current ± 20 mA DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 300 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDEDOPERATINGCONDITIONS

Symb o l Parame t er Value Un i t

V

T

dt/dv Input Rise and Fall Time V

1) VINfrom30%to 70%of V

2/7

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: -40 to +85

op

= 3.0, 4.5 or 5.5 V(note 1) 8 ns/V

CC

CC CC

V V

o

C

DC SPECIFICATIONS

74AC04

Symbol Parameter Test Condit ions Value Unit

V

CC

(V)

High Level Input Voltage 3.0 VO= 0.1 V or

V

IH

4.5 3.15 2.25 3.15

V

CC

- 0.1 V

T

=25oC-40to85

A

Min. Ty p. Ma x. Min. Max.

2.1 1.5 2.1

o

C

5.5 3.85 2.75 3.85

Low Level Input Voltage 3.0 VO= 0.1 V or

V

IL

4.5 2.25 1.35 1.35

V

CC

- 0.1 V

1.5 0.9 0.9

5.5 2.75 1.65 1.65

High Level Output

V

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current

I

Quiescent Supply

I

CC

3.0

4.5 I

5.5 I

V V

3.0 I

4.5 I

5.5 I

3.0

4.5 I

5.5 I

V V

3.0 I

4.5 I

5.5 I

5.5

IO=-50 µA 2.9 2.99 2.9

(*)

I IH

V

IL

=-50 µA 4.4 4.49 4.4

O

=

=-50 µA 5.4 5.49 5.4

or

O

=-12 mA 2.56 2.46

O

=-24 mA 3.86 3.76

O

=-24 mA 4.86 4.76

O

IO=50 µA 0.002 0.1 0.1

(*)

I IH

V

IL

=50 µA 0.001 0.1 0.1

O

=

=50 µA 0.001 0.1 0.1

or

O

=12 mA 0.36 0.44

O

=24 mA 0.36 0.44

O

=24 mA 0.36 0.44

O

VI=VCCor GND ±0.1 ±1 µA

5.5 VI=VCCor GND 4 40 µA

Current Dynamic Output Current

I

OLD

OHD

(note 1, 2)

I

1) Maximum test duration 2ms, one output loaded at time

2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω. (*)All outputs loaded.

5.5 V

= 1.65 V max 75 mA

OLD

V

= 3.85 V min -75 mA

OHD

V

AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Inputtr=tf=3ns)

Symbol Parameter Test Cond itio n Value Unit

t

Propagation Delay Time 3.3

PLH

t

PHL

(*) Voltagerange is3.3V± 0.3V (**) Voltagerangeis5V± 0.5V

V

5.0

CC

(V)

(*)

(**)

T

=25oC-40to85

A

Min. Ty p. Ma x. Min. Max.

1.5 5.0 9.0 1.0 10.0

1.5 4.0 7.0 1.0 8.0

o

C

ns

CAPACITIVE CHARACTERISTICS

Symbol Parameter Test Condit ions Value Unit

=25oC-40to85

T

A

Min. Ty p. Ma x. Min. Max.

4

Input Capacitance

C

IN

Power Dissipation

C

PD

V

CC

(V)

5.0

5.0 33 pF

Capacitance (note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

(opr) =CPD• VCC•fIN+ICC/n (percircuit)

CC

o

C

pF

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