SGS Thomson Microelectronics 74AC02 Datasheet

74AC02

QUAD 2-INPUT NOR GATE

■ HIGH SPEED: t

■ LOWPOWER DISSIPATION:

=4µA (MAX.) at TA=25oC

I

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ 50Ω TRANSMISSIONLINE DRIVING

= 4.5 ns(TYP.) at VCC=5V

PD

=28%VCC(MIN.)

CAPABILITY

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=24 mA (MIN)

OH

■ BALANCEDPROPAGATIONDELAY S:

t

≅ t

PLH

PHL

■ OPERATINGVOLTAGERAN GE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

74SERIES02

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The AC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal

B

(Plastic Package)

(Micro Package)

M

ORDERCODES:

74AC02B 74AC02M

wiring C

2

MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunityand stableoutput.

All inputs and outputs are equipped with protectioncircuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

PINCONNECTION AND IEC LOGICSYMBOLS

April 1997

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74AC02

INPUTAND OUTPUTEQUIVALENTCIRCUIT

PIN DESCRIPTION

PI N No SYM B O L NAME AND FUNCT I ON

2, 5, 8, 11 1A to 4A Data Inputs 3, 6, 9, 12 1B to 4B Data Inputs

1, 4, 10, 12 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

TRUTHTABLE

ABY

LLH

LHL HLL HHL

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

I

OK

I

orI

I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.

Supply Voltage -0.5 to +7 V

CC

DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V

O

DC Input Diode Current ± 20 mA

IK

DC Output Diode Current ± 20 mA DC Output Current ± 50 mA

O

DC VCCor Ground Current ± 200 mA

GND

Storage Temperature -65 to +150

stg

Lead Temperature (10 sec) 300

L

o

C

o

C

RECOMMENDED OPERATINGCONDITIONS

Symb o l Parame t er Value Un i t

V

T

dt/dv Input Rise and Fall Time V

1) VINfrom30%to70%of V

2/7

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: -40 to +85

op

= 3.0, 4.5 or 5.5 V(note 1) 8 ns/V

CC

CC CC

V V

o

C

DC SPECIFICATIONS

74AC02

Symbol Parameter Test Condition s Value Unit

V

CC

(V)

High Level Input Voltage 3.0 VO= 0.1 V or

V

IH

4.5 3.15 2.25 3.15

V

CC

- 0.1 V

T

=25oC-40to85

A

Min. Typ. Max. Min . Max.

2.1 1.5 2.1

o

C

5.5 3.85 2.75 3.85

Low Level Input Voltage 3.0 VO= 0.1 V or

V

IL

4.5 2.25 1.35 1.35

V

CC

- 0.1 V

1.5 0.9 0.9

5.5 2.75 1.65 1.65

High Level Output

V

OH

Voltage

Low Level Output

V

OL

Voltage

Input Leakage Current

I

Quiescent Supply

I

CC

3.0

4.5 I

5.5 I

V V

3.0 I

4.5 I

5.5 I

3.0

4.5 I

5.5 I

V V

3.0 I

4.5 I

5.5 I

5.5

IO=-50 µA 2.9 2.99 2.9

(*)

I IH

V

IL

=-50 µA 4.4 4.49 4.4

O

=

=-50 µA 5.4 5.49 5.4

or

O

=-12 mA 2.56 2.46

O

=-24 mA 3.86 3.76

O

=-24 mA 4.86 4.76

O

IO=50 µA 0.002 0.1 0.1

(*)

I IH

V

IL

=50 µA 0.001 0.1 0.1

O

=

=50 µA 0.001 0.1 0.1

or

O

=12 mA 0.36 0.44

O

=24 mA 0.36 0.44

O

=24 mA 0.36 0.44

O

VI=VCCor GND ±0.1 ±1 µA

5.5 VI=VCCor GND 4 40 µA

Current Dynamic Output Current

I

OLD

OHD

(note 1, 2)

I

1) Maximum test duration 2ms, one output loaded at time

2) Incident wave switching is guaranteed on transmission lines with impedances aslow as 50 Ω. (*)All outputs loaded.

5.5 V

= 1.65 V max 75 mA

OLD

V

= 3.85 V min -75 mA

OHD

V

AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Inputtr=tf=3ns)

Symbol Parameter Test Conditi on Value Unit

t

Propagation Delay Time 3.3

PLH

t

PHL

(*) Voltagerangeis 3.3V± 0.3V (**) Voltagerangeis5V± 0.5V

V

5.0

CC

(V)

(*)

(**)

T

=25oC-40to85

A

Min. Typ. Max. Min . Max.

1.5 5.5 7.5 1 8

1.5 4.5 6.5 1 7

o

C

ns

CAPACITIVE CHARACTERISTICS

Symbol Parameter Test Condition s Value Unit

=25oC-40to85

T

A

Min. Typ. Max. Min . Max.

4

Input Capacitance

C

IN

Power Dissipation

C

PD

V

CC

(V)

5.0

5.0 46 pF

Capacitance (note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

(opr) = CPD• VCC•fIN+ICC/n (percircuit)

CC

o

C

pF

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