SGS Thomson Microelectronics 2N720A Datasheet
HIGH VOLTAGE GENERAL PURPOSE
DESCRI PTIO N
The 2N720A is a silicon planarepitaxial NPN transistorinJedec TO-18 metal case. It is suitable for a
wide variety of amplifier and switchingapplications.
2N720A
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
P
T
stg,Tj
C
tot
Collector-base Voltage (IE=0) 120 V
Collector–emitter Voltage (IR=0) 80 V
Emitter–base Voltage (IC=0) 7 V
Collector Current 500 mA
Total Power Dissipation at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
≤ 25 °C
≤ 25 °C
0.5
1.8
W
W
October 1988
1/4
2N720A
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS(T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
=25°C unless otherwise specified)
amb
Max
Max
97.2
350
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cutoff Current
VCB=90V 10 nA
(IE=0)
V
(BR)CBO
Collector–base Breakdown
=100µA 120 V
I
C
Voltage
(I
=0)
E
V
(BR)CEO
* Collector–emitter Breakdown
=30mA 80 V
I
C
Voltage
(I
=0)
B
V
(BR)EB O
Emitter–base Breakdown
=100µA7 V
I
E
Voltage
(I
=0)
E
I
EBO
Emitter Cuttoff Current
VEB=5V 10 nA
(IE=0)
V
V
* Collector–emitter Saturation
CE(sat)
Voltage
* Base–emitter Saturation
BE(sat)
Voltage
h
* DC Current Gain IC=100µA
FE
IC=50mA
I
C
IC=50mA
I
C
IC=10mA
IC=150mA
h
fe
C
CBO
High Frequency Current
Gain
IC=50mA
f=20MHz
Collector–base Capacitance IE=0
=150mA
=150mA
=5mA
I
B
I
=15mA
B
=5mA
I
B
I
=15mA
B
VCE=10V
VCE=10V
VCE=10V
20
35
40 120
1.2
5
0.9
1.3
VCE= 10 V 2.5 –
VCB=10V 15 pF
f = 1 MHz
C
EBO
Emitter–base Capacitance IC=0
VEB= 0.5 V 85 pF
f = 1 MHz
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
°C/W
°C/W
V
V
V
V
–
–
–
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