SGS Thomson Microelectronics 2N6668 Datasheet
SILICON PNP POWER DARLINGTON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ PNP DARLING TO N
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
■ GENERAL PURPOSE SWITCHING
■ GENER AL PURPO SE SWITCHING AND
AMPLIFIER
TO-220
2N6668
3
2
1
INTERNAL SCHEMATIC DIAGRAM
R1(typ) = 8 kΩ R2(typ) = 120 Ω
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
For PNP type voltage and current values are negative.
Collector-Base Voltage (IE = 0) 80 V
CBO
Collector-Emitter Voltage (IB = 0) 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 10 A
I
C
Collector Peak Current 15 A
CM
Base Current 250 mA
I
B
Total Dissipation at Tc ≤ 25 oC65W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
July 1997
1/4
2N6668
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.92
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
EBO
I
CEV
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
Collector Cut-off
Current (V
= -1.5V)
EB
∗ Collector-Emitter
= 80 V 1 mA
V
CE
= 5 V 5 mA
V
EB
= 80 V 300 µA
V
CE
I
= 200 mA 80 V
C
Sustaining Voltage
(I
=0)
B
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
hFE∗ DC Current Gain IC = 5 A VCE = 3 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
IC = 5 A IB = 0.01 A
I
= 10 A IB = 0.1 A
C
IC = 5 A IB = 0.01 A
I
= 10 A IB = 0.1 A
C
I
= 10 A VCE = 3 V
C
1000
100
2
3
2.8
4.5
20000
V
V
V
V
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