SGS Thomson Microelectronics 2N6388 Datasheet
®
SILICON NPN POWER DARLINGTON TRANSISTOR
■ STMicroelectronics P REF ERRED
SALESTYPE
■ NPN DARLINGTON
■ HIGH CURRENT CAPABILITY
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The device is a silicon epitaxial-base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency
power applications.
TO-220
2N6388
3
2
1
INTER NAL SCH E M ATI C DIAG RA M
R1 Typ. = 10 KΩ R2 Typ. = 160 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
V
I
P
T
Collector-Base Voltage (IB = 0) 80 V
CBO
Collector-Emitter Voltage (VBE = -1.5V) 80 V
CEV
Collector-Emitter Voltage (RBE ≤ 100Ω)
CER
Collector-Emitter Voltage (IB = 0) 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 10 A
I
C
Collector Peak Current 15 A
CM
Base Current 0.25 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
80 V
65 W
o
C
o
C
April 1999
1/4
2N6388
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.92
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= rated V
V
CE
VCE = rated V
= 80 V 1 mA
V
CE
= 5 V 5 mA
V
EB
CEO
Tc = 125 oC
CEO
0.3
3
IC = 200 mA 80 V
Sustaining Voltage
V
CER(sus)
∗ Collector-Emitter
I
= 200 mA RBE = 100 Ω
C
80 V
Sustaining Voltage
V
CEV(sus)
∗ Collector-Emitter
IC = 200 mA VBE = -1.5V 80 V
Sustaining Voltage
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter Voltage IC = 5 A VCE = 3 V
BE
h
∗ DC Current Gain IC = 5 A VCE = 3 V
FE
h
Small Signal Current
fe
Gain
VF∗ Parallel-diode Forward
IC = 5 A IB = 10 mA
I
= 10 A IB = 100 mA
C
2
3
2.8
I
= 10 A VCE = 3 V
C
I
= 10 A VCE = 3 V
C
1000
100
4.5
20000
IC = 1 A VCE = 10 V f = 1MHz
I
= 1 A VCE = 10 V f = 1KHz201000
C
IF = 10 A 4 V
Voltage
C
CBO
Collector Base
IE = 0 VCB = 10 V f = 1MHz 200 pF
Capacitance
I
∗∗ Second Breakdown
s/b
VCE = 25 V 2.6 A
Collector Current
E
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗∗ Pulsed: Pulse duration = 100ms non repetitive pulse.
Second Breakdown
s/b
Energy
L = 12 mH R
V
= -1.5 V IC = 4.5 A
BE
= 100 Ω
BE
120 mJ
mA
mA
V
V
V
V
2/4
Loading...