SGS Thomson Microelectronics 2N6284, 2N6287 Datasheet
POWER DARLINGTON TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ COMPLEMEN TA RY PNP - NPN DEVI CES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6284 is a silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
It is inteded for general purpose amplifier and low
frequency switching applications.
The complementary PNP types is 2N6287.
2N6284
2N6287
COMPLE MENTARY SILICON
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 8 KΩ R2 Typ. = 60 Ω
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
NPN 2N6284
PNP 2N6287
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 20 A
I
C
Collector Peak Current 40 A
CM
Base Current 0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC 160 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
1/4
2N6284 / 2N6287
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.09
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= rated V
V
CE
VCE = rated V
= 50 V 1 mA
V
CE
= 5 V 2 mA
V
EB
CEO
Tc = 150 oC
CEO
0.5
5
IC = 100 mA 100 V
Sustaining Voltage
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
IC = 10 A IB = 40 mA
I
= 20 A IB = 200 mA
C
2
3
IC = 20 A IB = 200 mA 4 V
Saturation Voltage
∗ Base-Emitter Voltage IC = 10 A VCE = 3 V 2.8 V
V
BE
hFE∗ DC Current Gain IC = 10 A VCE = 3 V
I
= 20 A VCE = 3 V
C
h
Small Signal Current
fe
IC = 3 A VCE = 10 V f = 1KHz 300
750
100
18000
Gain
C
CBO
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Collector Base
Capacitance
IE = 0 VCB = 10 V f = 100KHz
for NPN types
for PNP types
400
600
mA
mA
V
V
pF
pF
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