SGS Thomson Microelectronics 2N6059 Datasheet
SILICO N NPN POW ER DAR L IN GTO N TRA NS IS T OR
■ SGS-THOMSON PREFERRED SALESTYPE
■ HIGH GAIN
■ NPN DARLINGTON
■ HIGH CURRENT
■ HIGH DISSIPATION
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
2N6059
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6059 is a silicon epitaxial-base NPN
transistor in monolithic Darlington configuration
mounted in Jedec TO -3 metal case.
It is inteded for use in power linear and low
frequency switching applications.
ABSOL UT E MAXIMU M RATINGS
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 KΩ R2 Typ. = 55 Ω
Symbol Parameter Value Unit
V
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (VBE = -1.5V) 100 V
CEX
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 12 A
I
C
Collector Peak Current 20 A
CM
Base Current 0.2 A
I
B
Total Dissipation at Tc ≤ 25 oC 150 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
June 1997
o
C
o
C
1/4
2N6059
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= rated V
V
CE
VCE = rated V
= 50 V 1 mA
V
CE
= 5 V 2 mA
V
EB
CEX
Tc = 150 oC
CEX
0.5
5
IC = 100 mA 100 V
Sustaining Voltage
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
IC = 6 A IB = 24 mA
I
= 12 A IB = 120 mA
C
2
3
IC = 12 A IB = 120 mA 4 V
Saturation Voltage
∗ Base-Emitter Voltage IC = 6 A VCE = 3 V 2.8 V
V
BE
hFE∗ DC Current Gain IC = 6 A VCE = 3 V
I
= 12 A VCE = 3 V
C
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Transition frequency IC = 5 A VCE = 3 V f =1 MHz 4 MHz
T
750
100
mA
mA
V
V
2/4
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