SGS Thomson Microelectronics 2N5886 Datasheet
®
2N5886
HIGH CURRENT SILICON NPN POWER TRANSISTOR
■ STMicroelectronics P REFE RRE D
SALESTYPE
■ HIGH CURRENT CAPABILITY
APPLICATIONS
■ GENERAL PURPO SE SWIT CHI NG AN D
AMPLIFIER
■ LINEAR AND SWITCHI NG INDUST RIAL
EQUIPMENT
DESCRIPTION
The 2N5886 is a silicon Epitaxial-Base NPN
power transistor mounted in Jedec TO-3 metal
case. It is inteded for use in power linear
amplifiers and switching applications.
1
2
TO-3
INTERNAL SCHEMAT I C DI AGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 80 V
CBO
Collector-Emitter Voltage (IB = 0) 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 25 A
C
Collector Peak Current 50 A
CM
I
Base Current 7.5 A
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 200
stg
T
Max. Operating Junction Temperature 200
j
200 W
o
C
o
C
January 2000
1/4
2N5886
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.875
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 80 V
V
CE
V
= 80 V Tc = 150 oC
CE
= 80 V 1 mA
V
CB
= 40 V 2 mA
V
CE
= 5 V 1 mA
V
EB
I
= 200 mA 80 V
C
1
10
Sustaining Voltage
(I
= 0)
B
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
IC = 15 A IB = 1.5 A
I
= 25 A IB = 6.25 A
C
1
4
IC = 25 A IB = 6.25 A 2.5 V
Saturation Voltage
∗ Base-Emitter Voltage IC = 10 A VCE = 4 V 1.5 V
V
BE
hFE∗ DC Current Gain IC = 3 A VCE = 4 V
I
= 10 A VCE = 4 V
C
I
= 25 A VCE = 4 V
C
h
Small Signal Current
fe
IC = 3 A VCE = 4 V f = 1KHz 20
35
20
100
4
Gain
f
C
CBO
Transition frequency IC = 1 A VCE = 10 V f =1 MHz 4 MHz
T
Collector Base
IE = 0 VCB = 10 V f = 1MHz 500 pF
Capacitance
RESISTIVE LOAD
Rise Time
t
r
s
t
f
Storage Time
Fall Time
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
I
= 10 A VCC = 30 V
C
I
= -IB2 = 1A 0.7
B1
1
0.8
mA
mA
V
V
µs
µs
µs
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