SGS Thomson Microelectronics 2N5657 Datasheet
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
DESCRIPTION
The 2N5657 is a silicon epitaxial-base NPN
transistor in Jedec SOT-32 plastic package. It is
intended for use output amplifiers, low current,
high voltage convertersand AC line relays.
2N5657
SILICON NPN TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
P
T
Collector-Base Voltage (IE= 0) 375 V
CBO
Collector-Emitter Voltage (IB= 0) 350 V
CEO
Emitter-Base Voltage (IC=0) 6 V
EBO
Collect or Current 0.5 A
I
C
Collect or Peak Current 1 A
CM
Base Current 0.25 A
I
B
Total Dissipati on at Tc≤ 25oC20W
tot
Stora ge Tem perat ure -65 to 150
stg
Max. Operati ng Junction Tem perat u r e 150
T
j
o
C
o
C
June 1997
1/5
2N5657
THERMAL DATA
R
thj-case
Ther mal Resistance Junction-cas e Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CBO
I
CEV
I
CEO
I
EBO
V
(BR) CEO
Collector Cut- of f
Current (I
E
=0)
Collector Cut- of f
Current (V
= -1. 5V )
BE
Collector Cut- of f
Current (I
B
=0)
Emit ter Cut- o f f Current
=0)
(I
C
∗ Collector- E mitter
V
=375V 0.01 mA
CE
V
=350V
CE
=250V Tc=100oC
V
CE
V
=250V 0.1 mA
CE
V
=6V 0.01 mA
EB
0.1
1
IC= 1 m A 350 V
Break dow n Voltage
V
CEO(sus)
∗ Co llector-Emitter
IC= 100 mA L = 50 mH 350 V
Sust aining Voltage
V
∗ Collector-Emitter
CE(sat)
Saturation Volta ge
V
∗ Base-Emitt er V oltage IC=0.1A VCE=10V 1 V
BE
h
∗ DC Current Gain IC=50mA VCE=10V
FE
h
Small Signal Current
fe
IC=0.1A IB=10mA
=0.25A IB=25mA
I
C
=0.5A IB=0.1A
I
C
25
=0.1A VCE=10V
I
C
=0.25A VCE=10V
I
C
=0.5A VCE=10V
I
C
30
15
IC=0.1A VCE= 10 V f = 1KHz 20
5
1
2.5
10
250
Gain
Tr ansition freque ncy IC=50mA VCE=10V f=10MHz 10 MHz
T
Collector Base
VCB= 10 V f = 100KHz 25 pF
C
f
CBO
Capacit a nc e
∗
Pulsed: Pulse duration = 300µs, duty cycle1.5 %
mA
mA
V
V
V
Safe Operating Area DeratingCurve
2/5
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