SGS Thomson Microelectronics 2N5416, 2N5415 Datasheet
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ PNP TRANS IS T OR
DESCRIPTION
The 2N5415, 2N5416 are high voltage silicon
epitaxial planar PNP transistors in Jedec TO-39
metal case designed for use in consumer and
industrial line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
2N5415
2N5416
SILICON PNP TRANSISTORS
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
2N5415 2N5416
V
V
V
P
P
T
Collector-Base Voltage (IE = 0) -200 -350 V
CBO
Collector-Emitter Voltage (IB = 0) -200 -300 V
CEO
Emitter-Base Voltage (IC = 0) -4 -6 V
EBO
Collector Current -1 A
I
C
I
Base Current -0.5 A
B
Total Dissipation at Tc ≤ 25 oC10W
tot
Total Dissipation at T
tot
Storage Temperature -65 to 200
stg
T
Max. Operating Junction Temperature 200
j
≤ 50 oC1W
amb
o
C
o
C
June 1997
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2N5415 / 2N5416
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
I
CBO
I
CEO
I
EBO
CER
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
for 2N5415 V
for 2N5416 V
= -150 V -50 µA
V
CE
for 2N5415 V
for 2N5416 V
= -175 V
CB
= -280 V
CB
= -4 V
EB
= -6 V
EB
-50
-50
-20
-20
IC = -50 mA RBE = 50Ω for 2N5416 -350 V
Sustaining Voltage
V
CEO(sus)
V
CE(sat)
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
IC = -10 mA
for 2N5415
for 2N5416
-200
-300
IC = -50 mA IB = -5 mA -2.5 V
Saturation Voltage
∗ Base-Emitter Voltage IC = -50 mA VCE = -10 V -1.5 V
V
BE
h
∗ DC Current Gain IC = -50 mA VCE = -10 V
FE
h
Small Signal Current
fe
for 2N5415
for 2N5416
30
30
IC = -5 mA VCE = -10 V f = 1KHz 25
150
120
Gain
f
C
CBO
Transition frequency IC = -10 mA VCE = -10 V f = 5MHz 15 MHz
T
Collector Base
IE = 0 VCB = -10 V f = 1MHz 25 pF
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
µA
µA
µA
µA
V
V
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