SGS Thomson Microelectronics 2N5321, 2N5320 Datasheet

SMALL SIGNAL NPN TRANSISTORS

■ SILICON EPI TAX IA L PLANAR N PN

TRANSISTORS

■ MEDIUM POWER AMPLIFIER

■ PNP COMPLEMENT S ARE 2N5322 AN D

2N5323

DESCRIPTION

The 2N5320 and 2N5321 are silicon epitaxial
planar NPN transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commercial equipments.

The complementary PNP types are respectively
the 2N5322 and 2N5323

2N5320
2N5321

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOL UT E MAXIMU M RATINGS

Symbol Parameter Value Unit

2N5320 2N5321

V
V
V
V

I

P
P

T

stg

Collector-Base Voltage (IE = 0) 100 75 V

CBO

Collector-Emitter Voltage (VBE = 1.5V) 100 75 V

CEV

Collector-Emitter Voltage (IB = 0) 75 50 V

CEO

Emitter-Base Voltage (IC = 0) 6 5 V

EBO

Collector Current 1.2 A

I

C

Collector Peak Current 2 A

CM

Base Current 1 A

I

B

Total Dissipation at T

tot

Total Dissipation at Tc = 25 oC10W

tot

, TjStorage and Junction Temperature -65 to 200

= 25 oC1W

amb

o

C

June 1997

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2N5320/2N5321

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max

17.5
175

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

I

EBO

V

(BR)CEV

V

(BR)CEO

V

(BR)EBO

V

CE(sat)

V

h

BE

FE

Collector Cut-off
Current (I

= 0)

E

Collector Cut-off
Current (I

= 0)

C

Collector-Emitter
Breakdown Voltage
(V

= 1.5V)

BE

∗ Collector-Emitter

Breakdown Voltage
(I

= 0)

B

Emitter-Base
Breakdown Voltage
(I

= 0)

C

∗ Collector-Emitter

Saturation Voltage

= 80 V for 2N5320

V

CB

V

= 60 V for 2N5321

CB

= 5 V for 2N5320

V

EB

V

= 4 V for 2N5321

EB

= 100 µA

I

C

for 2N5320
for 2N5321

I

= 10 mA

C

for 2N5320
for 2N5321

= 100 µA

I

E

for 2N5320
for 2N5321

IC = 500 mA IB = 50 mA
for 2N5320
for 2N5321

∗ Base-Emitter Voltage IC = 500 mA VCE = 4 V

for 2N5320
for 2N5321

∗ DC Current Gain for 2N5320

I

= 500 mA VCE = 4 V

C

I

= 1 A VCE = 2 V

C

100

75

75
50

6
5

30
10

0.5
5

0.1

0.5

0.5

0.8

1.1

1.4

130

for 2N5321
I

f

t

Transition Frequency IC = 50 mA VCE = 4 V f = 10 MHz 50 MHz

T

Turn-on Time IC = 500 mA VCC = 30 V

on

I

t

Turn-off Time IC = 500 mA VCC = 30 V

off

I

∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1 %

= 500 mA VCE = 4 V

C

= 50 mA

B1

= -IB2 = 50 mA

B1

40

250

80 ns

800 ns

µA
µA

µA
µA

V
V

V
V

V
V

V
V

V
V

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