SGS Thomson Microelectronics 2N5195 Datasheet
MEDIUM POWER PNP SILICON TRANSISTOR
■ SGS-THOMSONPREFERRED SALESTYPE
■ PNP TRANSISTOR
APPLICATIONS
■ LINEARANDSWITCHINGINDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5195 is a silicon epitaxial-base PNP
transistorin JedecSOT-32plastic package.
It is inteded for use in medium power linear and
switchingapplications.
The complementaryNPN typeis 2N5192.
SOT-32
2N5195
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
P
T
Collect or- B as e Vo ltage (IE=0) -80 V
CBO
Collector-Emitter Voltage ( IB=0) -80 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
I
Collect or Curr ent -4 A
C
Collect or Pea k Cur rent -7 A
CM
I
Base Current -1 A
B
Tot al Dissipation at Tc≤ 25oC40W
tot
Storage Temperature -65 to 1 50
stg
T
Max. O perating J unct i on Tem perat u re 150
j
o
C
o
C
June 1997
1/5
2N5195
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Res istan ce Junct io n- case Max
Ther mal Res istan ce Junct io n- ambient Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CBO
I
CEX
I
CEO
I
EBO
V
CEO(sus )
Collector C ut -off
Current (I
E
=0)
Collector C ut -off
Current (V
= -1. 5V )
BE
Collector C ut -off
Current (I
B
=0)
Emit ter Cut - o f f C urr ent
=0)
(I
C
∗ Collector-E mitt er
=ratedV
V
CB
V
=ratedV
CE
VCE=ratedV
V
=ratedV
CE
V
=-5V -1 mA
EB
CBO
CEO
CEOTc
CEO
=125oC
-0.1 mA
-0.1
-2
-1 mA
IC=-100mA -80 V
Sust aining V olt ag e
V
∗ Collector-E m it t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er V oltage IC=-1.5A VCE=-2V -1.2 V
BE
h
∗ DC Current G ain IC=-1.5A VCE=-2V
FE
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Tr ansition f requency IC=-1A VCE=-10V 2 MHz
T
IC=-1.5A IB= -0.15 A
I
=-4A IB=-1A
C
I
=-4A VCE=-2V
C
20
-0.6
-1.2
80
7
mA
mA
V
V
Safe Operating Area DeratingCurves
2/5
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