SGS Thomson Microelectronics 2N5038 Datasheet
HIGH CURR ENT NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
DESCRIPTION
The 2N5038 is a silicon planar multiepitaxial NPN
transistors in Jedec TO-3 metal case. They are
especially intended for high current and switching
applications.
2N5038
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 150 V
CBO
Collector-Emitter Voltage (VBE=-1.5V RBE=100Ω) 150 V
CEX
Collector-Emitter Voltage (RBE < 50Ω) 110 V
CER
Collector-Emitter Voltage (IB = 0) 90 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 20 A
I
C
Collector Peak Current 30 A
CM
Base Current 5 A
I
B
Total Dissipation at Tc ≤ 25 oC 140 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
1/4
2N5038
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
Collector Cut-off
Current (V
= -1.5V)
BE
= 140 V
V
CE
V
= 100 V Tc = 150 oC50
CE
10
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 70 V 20 mA
V
CE
= 7 V
V
V
EB
EB
= 5 V
50
5
IC = 0.2 A 90 V
Sustaining Voltage
V
CER(sus)
∗ Collector-Emitter
IC = 0.2 A RBE = 50 Ω 110 V
Sustaining Voltage
V
CEX(sus)
∗ Collector-Emitter
IC = 0.2 A RBE = 100 Ω VBE =-1.5V 150 V
Sustaining Voltage
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Collector-Emitter
IC = 12 A IB = 1.2 A
I
= 20 A IB = 5 A
C
1
2.5
IC = 20 A IB = 5 A 3.3 V
Saturation Voltage
∗ Base-Emitter Voltage IC = 12 A VCE = 5 V 1.8 V
V
BE
h
∗ DC Current Gain IC = 2 A VCE = 5 V
FE
h
Small Signal Current
fe
I
= 12 A VCE = 5 V
C
IC = 2 A VCE = 10 V f = 5 MHz 12
50
20
250
100
Gain
C
CBO
Collector-Base
IE = 0 VCB = 10 V f = 1 MHz 300 pF
Capacitance
Rise Time IC = 12 A VCC = 30 V
t
r
t
Storage Time 1.5 µs
s
I
= -IB2 = 1.2A
B1
0.5 µs
mA
mA
mA
mA
V
V
Fall Time 0.5 µs
t
f
I
∗∗ Second Breakdown
s/b
Collector Current
E
Second Breakdown
s/b
VCE = 28 V
V
VBE = -4 V RBE = 20 Ω L = 180µH13 mJ
Energy
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
= 45 V
CE
5
0.9
A
A
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