SGS Thomson Microelectronics 2N4036 Datasheet
DESCRIPTION
The 2N4036 is a silicon planar epitaxial PNP transistorin Jedec TO-39 metalcase. It isintended particularly as medium speed saturated switch and
generalpurpose amplifier.
2N4036
MEDIUM-SPEED SWITCH
TO-39
INTE RNA L SCHEMATI C DI AGR AM
ABSOLUTE M AXI MUM RATI N GS
Symbol Parameter Value Unit
V
CBO
V
CEX
V
CER
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg,Tj
Collector-base Voltage (IE=0) –90 V
Collector-emitter Voltage (VBE= 1.5 V) – 85 V
Collector-emitter Voltage (RBE≤ 200 Ω )–85V
Collector-emitter Voltage (IB=0) –65 V
Emitter-base Voltage (IC=0) –6 V
Collector Current – 1 A
Base Current – 0.5 A
Total Power Dissipation at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
≤ 25 °C
≤ 25 °C
1
7
W
W
October 1988
1/5
2N4036
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
25
175
°C/W
°C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cutoff Current
VCB= – 60 V – 20 nA
(IE=0)
I
CEO
Collector Cutoff Current
VCE= – 30 V – 0.5 µA
(IB=0)
I
EBO
Emitter Cutoff Current
VEB=–5V –20 nA
(IC=0)
V(
BR)CBO
V
(BR)CEX
V
(BR)CER
Collector-base Breakdown
Voltage (I
E
=0)
* Collector-emitter Breakdown
Voltage (V
BE
= 1.5V)
* Collector-emitter Breakdown
=–100µA – 90 V
I
C
=–10mA –85 V
I
C
IC=–10mA –85 V
Voltage (RBE=200Ω)
V
* Collector-emitter Breakdown
(BR)CEO
IC=–10mA –65 V
Voltage (IB=0)
V
(BR)EB O
Emitter-base Breakdown Voltage
IE=–100µA–7V
(IC=0)
V
* Collector-emitter Saturation
CE(sat)
IC=–150mA IB= – 15 mA – 0.65 V
Voltage
V
* Base-emitter Voltage IC=–150mA VCE= – 10 V – 1.1 V
BE
h
* DC Current Gain IC= – 0.1 mA
FE
f
T
C
EBO
C
CBO
t
on
t
off
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
** See test circuit.
Transition Frequency IC=–50mA
Emitter-base Capacitance IC=0
Collector-base Capacitance IE=0
** Turn-on Time IC=–150mA
** Turn-off Time IC=–150mA
I
=–150mA
C
IC=–500mA
f = 20 MHz
f=1MHz
f=1MHz
I
=–15mA
B1
I
=–IB2=–
B1
15 mA 700
=–10V
V
CE
V
=–10V
CE
VCE=–10V
VCE=–10V
VEB= – 0.5 V
VCB=–10V
= – 30V
V
CC
=–30V
V
CC
20
40
20
60
140
90
30
110
MHz
pF
pF
ns
ns
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