SGS Thomson Microelectronics 2N4033 Datasheet
GENERAL PURPOSE AMPLIFIER AND SWITCH
DESCRIPTION
The 2N4033 is a silicon planar epitaxial PNP
transistors in Jedec TO-39 metal case primary
intended for large signal, low noise industrial
applications.
2N4033
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) -80 V
CBO
Collector-Emitter Voltage (IB=0) -80 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
Collect or Current -1 A
I
C
Total Dissipati on at T
tot
Stora ge Tem perat ure -55 to 200
stg
Max. Operati ng Juncti on Tem perat ure 200
T
j
at T
amb
case
≤ 45oC
≤ 45oC
0.8
4
W
W
o
C
o
C
November 1997
1/6
2N4033
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Res istance Junct ion-Case Max
Thermal Resistance Junction-Ambient Max
44
218
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR) CBO
CBO
Collector Cut- of f
Current (I
E
=0)
∗ Co llec tor-Base
=-60V
V
CE
V
=-60V T
CE
I
=-10µA-80V
C
amb
=150oC
-50
-50
Break dow n Voltage
=0)
(I
E
V
∗ Co llec tor-Emitter
(BR) CEO
I
=-10mA -80 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
∗ Emitt er-Base
I
=-10µA-5V
E
Break dow n Voltage
=0)
(I
C
V
V
∗ Co llector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent G ain IC=-100µAVCE=-5V
FE
f
Tr ansition Fr eque nc y IC=-50mA VCE= -10 V
T
IC=-150mA IB=-15mA
=-500mA IB=-50mA
I
C
IC=-150mA IB=-15mA
=-500mA IB=-50mA
I
C
=-100mA VCE=-5V
I
C
=-500mA VCE=-5V
I
C
=-1A VCE=-5V
I
C
=-100mA VCE=-5V
I
C
T
=-55oC
amb
75
100
70
25
40
150 500 M Hz
-0.15
-0.5
-0.9
-1.1
300
f = 100 M H z
C
EBO
Emitt er Base
IE=0 VEB= -0.5 V f = 1MHz 110 pF
Capacit a nc e
C
CBO
Collector B as e
IE=0 VCB=-10V f=1MHz 20 pF
Capacit a nc e
∗∗ St orage Tim e IC=-500mA VCE=-30V
t
s
∗∗ Fall Time IC=-500mA VCE=-30V
t
f
∗∗ Turn-on T ime IC=-500mA VCE=-30V
t
on
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
∗
See Test Circuit
∗
=-IB2=-50mA
I
B1
=-IB2=-50mA
I
B1
=-IB2=-50mA
I
B1
350 ns
50 ns
100 ns
nA
µA
V
V
V
V
2/6
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