HIGH-VOLTAGE, HIGH CURRENT SWITCH
DESCRIPTIO N
The 2N4014is a silicon planar epitaxialtransistor in
TO-18metalcase.It is a high-voltage, high current
switch used for memory applications requiring
breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT (300 MHz) and tight
controlon storagetime.
2N4014
TO-18
INTERNA L SCH EMATI C DIAGRAM
ABSOLUTE MAXIMUM RAT IN G S
Symbol Parameter Value Unit
V
CBO
V
CES
V
CEO
V
EBO
I
P
T
stg,Tj
C
tot
Collector-base Voltage (IE=0) 80 V
Collector-emitter Voltage (VBE=0) 80 V
Collector-emitter Voltage (IB=0) 50 V
Emitter-base Voltage (IC=0) 6 V
Collector Current 1 A
Total Power Dissipation at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
≤ 25 °C
≤ 25 °C
0.36
1.2
W
W
October 1988
1/6
2N4014
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISITCS(T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
=25°C unless otherwise specified)
amb
Max
Max
146
486
°C/W
°C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V(
BR)CBO
CBO
Collector Cutoff Current
(IE=0)
Collector-base Breakdown
VCB=60V
VCB=60V T
=10µA80V
I
C
amb
=100°C
1.7
120µAµA
Voltage
(I
=0)
E
V
(BR)CES
V
(BR)CEO
Collector-emitter Breakdown
Voltage (V
BE
=0)
* Collector-Emitter Breakdown
=10 µA80V
I
C
IC=10mA 50 V
Voltage (IB=0)
V
(BR)EB O
Emitter-Base Breakdown Voltage
IE=10 µA6V
(IC=0)
0.4
0.5
0.6
1.0
1.1
60
90
60
65
40
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
150
V
* Collector-Emitter Saturation
CE(sa t)
Voltage
V
* Base-Emitter Saturation Voltage IC=10mA
BE(sat)
h
* DC Current Gain IC=10mA
FE
h
fe
High Frequency Current Gain IC=50mA
IC=10mA
IC=100mA
I
=300mA
C
IC=500mA
IC=800mA
I
=1000mA
C
IC=100mA
IC=300mA
I
=500mA
C
IC=800mA
I
=1000mA
C
I
=100mA
C
IC=300mA
I
=1000mA
C
IC=800mA
IC=500mA
I
=1 mA
B
IB=10 mA
I
=30mA
B
IB=50mA
IB=80mA
I
=100mA
B
I
=1mA
B
IB=10mA
IB=30mA
I
=50mA
B
0.9
IB=80mA
I
=100mA
B
V
=1V
CE
V
=1V
CE
VCE=1V
V
=5V
CE
VCE=2V
VCE=1V
30
60
40
25
20
35
VCE=10V 3
0.19
0.21
0.31
0.64
0.75
0.89
f = 100 MHz
C
CBO
Collector-base Capacitance IE=0
VCB= 10 V 10 pF
f=1MHz
C
EBO
Emitter-base Capacitance IC=0
VEB= 0.5 V 55 pF
f=1MHz
** Turn-on Time IC=500mA
t
on
IB=50mA 35 ns
VCC=30V
t
** Turn-off Time IC=500mA
off
* Pulsed : pulse duration = 300 ms, duty cycle = 1 %.
** See test circuit.
IB1=–IB2=50
VCC=30V
mA
60 ns
V
V
V
V
V
V
V
V
V
V
V
V
2/6
2N4014
DC Current Gain. Collector-emitter Saturation Voltage.
Base-emitterSaturation Voltage. Contours of Constant Transition Frequency.
SwitchingCharacteristics. Switching Characteristics.
3/6
2N4014
Test Circuitfor ton,t
.
off
PULSE GENERATOR :
< 1.0 ns
t
r,tf
PW ≈ 1.0 µs
=50Ω
Z
IN
DC < 2 %
TO OSCILLOSCOPE:
≈ 1.0 ns
t
r
>100 KΩ
Z
IN
4/6
TO-18 MECHANICAL DATA
2N4014
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o
mm inch
o
45
G
I
H
DA
F
E
L
B
C
0016043
5/6
2N4014
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consequences of use of such information nor for any infringementofpatents or other rights of third parties which may results from its use. No
license isgrantedby implication orotherwiseunder anypatent or patent rights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
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written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
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