SGS Thomson Microelectronics 2N4014 Datasheet
HIGH-VOLTAGE, HIGH CURRENT SWITCH
DESCRIPTIO N
The 2N4014is a silicon planar epitaxialtransistor in
TO-18metalcase.It is a high-voltage, high current
switch used for memory applications requiring
breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT (300 MHz) and tight
controlon storagetime.
2N4014
TO-18
INTERNA L SCH EMATI C DIAGRAM
ABSOLUTE MAXIMUM RAT IN G S
Symbol Parameter Value Unit
V
CBO
V
CES
V
CEO
V
EBO
I
P
T
stg,Tj
C
tot
Collector-base Voltage (IE=0) 80 V
Collector-emitter Voltage (VBE=0) 80 V
Collector-emitter Voltage (IB=0) 50 V
Emitter-base Voltage (IC=0) 6 V
Collector Current 1 A
Total Power Dissipation at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
≤ 25 °C
≤ 25 °C
0.36
1.2
W
W
October 1988
1/6
2N4014
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISITCS(T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
=25°C unless otherwise specified)
amb
Max
Max
146
486
°C/W
°C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V(
BR)CBO
CBO
Collector Cutoff Current
(IE=0)
Collector-base Breakdown
VCB=60V
VCB=60V T
=10µA80V
I
C
amb
=100°C
1.7
120µAµA
Voltage
(I
=0)
E
V
(BR)CES
V
(BR)CEO
Collector-emitter Breakdown
Voltage (V
BE
=0)
* Collector-Emitter Breakdown
=10 µA80V
I
C
IC=10mA 50 V
Voltage (IB=0)
V
(BR)EB O
Emitter-Base Breakdown Voltage
IE=10 µA6V
(IC=0)
0.4
0.5
0.6
1.0
1.1
60
90
60
65
40
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
150
V
* Collector-Emitter Saturation
CE(sa t)
Voltage
V
* Base-Emitter Saturation Voltage IC=10mA
BE(sat)
h
* DC Current Gain IC=10mA
FE
h
fe
High Frequency Current Gain IC=50mA
IC=10mA
IC=100mA
I
=300mA
C
IC=500mA
IC=800mA
I
=1000mA
C
IC=100mA
IC=300mA
I
=500mA
C
IC=800mA
I
=1000mA
C
I
=100mA
C
IC=300mA
I
=1000mA
C
IC=800mA
IC=500mA
I
=1 mA
B
IB=10 mA
I
=30mA
B
IB=50mA
IB=80mA
I
=100mA
B
I
=1mA
B
IB=10mA
IB=30mA
I
=50mA
B
0.9
IB=80mA
I
=100mA
B
V
=1V
CE
V
=1V
CE
VCE=1V
V
=5V
CE
VCE=2V
VCE=1V
30
60
40
25
20
35
VCE=10V 3
0.19
0.21
0.31
0.64
0.75
0.89
f = 100 MHz
C
CBO
Collector-base Capacitance IE=0
VCB= 10 V 10 pF
f=1MHz
C
EBO
Emitter-base Capacitance IC=0
VEB= 0.5 V 55 pF
f=1MHz
** Turn-on Time IC=500mA
t
on
IB=50mA 35 ns
VCC=30V
t
** Turn-off Time IC=500mA
off
* Pulsed : pulse duration = 300 ms, duty cycle = 1 %.
** See test circuit.
IB1=–IB2=50
VCC=30V
mA
60 ns
V
V
V
V
V
V
V
V
V
V
V
V
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