SGS Thomson Microelectronics 2N3906-AP, 2N3906 Datasheet
®
SMALL SIGNAL PNP TRANSISTOR
Ordering Code Marking Package / Shipment
2N3906 2N3906 TO-92 / Bulk
2N3906-AP 2N3906 TO-92 / Ammopack
■ SILICON EPI TAX IA L PLANAR N PN
TRANSISTOR
■ TO-92 PACKAGE SUITABLE FOR
THROU GH-HOLE PCB ASSEMBLY
■ THE NPN COMPLE M ENT A RY T YP E IS
2N3904
APPLICATIONS
■ WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
■ SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
2N3906
PRELIMINARY DATA
TO-92
Bulk
INTER NAL SCH E M ATI C DIAG RA M
TO-92
Ammopack
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
February 2003
Collector-Base Voltage (IE = 0) -60 V
CBO
Collector-Emitter Voltage (IB = 0) -40 V
CEO
Emitter-Base Voltage (IC = 0) -6 V
EBO
I
Collector Current -200 mA
C
Total Dissipation at TC = 25 oC 625 mW
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
1/5
2N3906
THERMAL DATA
R
R
thj-amb
thj-Case
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Case Max
200
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
BEX
V
(BR)CEO
Collector Cut-off
Current (V
= 3 V)
BE
Base Cut-off Current
(V
= 3 V)
BE
∗ Collector-Emitter
= -30 V -50 nA
V
CE
= -30 V -50 nA
V
CE
I
= -1 mA -40 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= -10 µA
I
C
-60 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= -10 µA
I
E
-6 V
Breakdown Voltage
(I
= 0)
C
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = -0.1 mA VCE = -1 V
FE
f
Transition Frequency IC = -10mA VCE = -20 V f = 100 MHz 250 MHz
T
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA
C
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA -0.65
C
I
= -1 mA VCE = -1 V
C
I
= -10 mA VCE = -1 V
C
I
= -50 mA VCE = -1 V
C
I
= -100 mA VCE = -1 V
C
NF Noise Figure VCE = -5 V IC = -0.1 mA f = 10 Hz
60
80
100
60
30
-0.25
-0.4
-0.85
-0.95
300
4dB
to 15.7 KHz RG = 1 KΩ
C
CBO
Collector-Base
IE = 0 VCB = -5 V f = 100 KHz 6 pF
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = -0.5 V f = 100 KHz 25 pF
Capacitance
t
t
Delay Time IC = -10 mA IB = -1 mA
d
Rise Time 35 ns
t
r
Storage Time IC = -10 mA IB1 = -IB2 = -1 mA
s
Fall Time 72 ns
t
f
V
V
CC
CC
= -3V
= -3V
35 ns
225 ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
V
V
V
V
2/5
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