SGS Thomson Microelectronics 2N3772, 2N3771 Datasheet
HIGH POWER NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
DESCRIPTION
The 2N3771, 2N3772 are silicon epitaxial-base
NPN transistors mounted in Jedec Jedec TO-3
metal case. They are intended for linear
amplifiers and inductive switching applications.
2N3771
2N3772
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
2N3771 2N3772
V
V
V
V
I
I
P
T
Collector-Emitter Voltage (IE = 0) 40 60 V
CEO
Collector-Emitter Voltage (VBE = -1.5V) 50 80 V
CEV
Collector-Base Voltage (IB = 0) 50 100 V
CBO
Emitter-Base Voltage (IC = 0) 5 7 V
EBO
Collector Current 30 20 A
I
C
Collector Peak Current 30 30 A
CM
Base Current 7.5 5 A
I
B
Base Peak Current 15 15 A
BM
Total Dissipation at Tc ≤ 25 oC 150 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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2N3771/2N3772
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
CEO
I
CBO
I
EBO
V
CEO(sus)
V
CEV(sus)
V
CER(sus)
V
CE(sat)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
Sustaining Voltage
(V
= -1.5V)
EB
∗ Collector-Emitter
Sustaining Voltage
(R
= 100 Ω)
BE
∗ Collector-Emitter
Saturation Voltage
for 2N3771 V
for 2N3772 V
for all V
for 2N3771 V
for 2N3772 V
for 2N3771 V
for 2N3772 V
for 2N3771 V
for 2N3772 V
I
= 0.2 A
C
= 50 V
CB
= 100 V
CB
= 30 V Tj = 150 oC
CB
= 30 V
CB
= 50 V
CB
= 50 V
CB
= 100 V
CB
= 5 V
CB
= 7 V
CB
for 2N3771
for 2N3772
I
= 0.2 A RBE = 100 Ω
C
for 2N3771
for 2N3772
I
= 0.2 A
C
for 2N3771
for 2N3772
for 2N3771
I
= 15 A IB = 1.5 A
C
I
= 30 A IB = 6 A
C
40
60
50
80
45
70
2
5
10
10
10
4
5
5
5
2
4
for 2N3772
I
= 10 A IB = 1 A
C
I
= 20 A IB = 4 A
C
V
∗ Base-Emitter Voltage for 2N3771
BE
I
= 15 A VCE = 4 V
C
1.4
4
2.7
for 2N3772
I
= 10 A VCE = 4 A
C
h
∗ DC Current Gain for 2N3771
FE
I
= 15 A VCE = 4 V
C
I
= 30 A VCE = 4 V
C
15
5
2.7
60
for 2N3772
I
= 10 A VCE = 4 V
C
I
= 20 A VCE = 4 V
C
h
Small Signal Current
FE
IC = 1 A VCE = 4 V f = 1 KHz 40
15
60
5
Gain
f
I
s/b
Transition frequency IC = 1 A VCE = 4 V f = 50 KHz 0.2 MHz
T
Second Breakdown
VCE = 25 V t = 1 s (non repetitive) 6 A
Collector Current
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
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