SGS Thomson Microelectronics 2N3725 Datasheet
HIGH VOLTAGE, HIGH CURRENT SWITCH
DESCRIPT I ON
The 2N3725 is a silicon planar epitaxial transistor
inTO-39metalcase Itisahigh-voltage, high current
switch used for memory applications requiring
breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT(300 MHz) and tight
controlon storage time.
2N3725
TO-39
INTE RNA L SCHEMA TI C DIAGR AM
ABSOLUTE M AXI MUM RATING S
Symbol Parame t er Valu e Unit
V
CBO
V
CES
V
CEO
V
EBO
I
P
T
stg,Tj
C
tot
Collector-base Voltage (IE=0) 80 V
Collector-emitter Voltage (VBE=0) 80 V
Collector-emitter Voltage (IB=0) 50 V
Emitter-base Voltage (IC=0) 6 V
Collector Current 1 A
Total Power Dissipation at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
≤ 25 °C
≤ 25 °C
0.8
3.5
W
W
January 1989
1/6
2N3725
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
50
220
°C/W
°C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V(
BR)CBO
V
(BR)CES
V(
BR)CEO
V(
BR)EBO
V
CE(sat)
V
BE (sat )
h
FE
h
fe
C
CB O
C
EBO
t
on
t
off
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
** See test circuit.
Collector Cutoff Current (IE=0) VCB=60V
V
=60V T
CB
Collector-base Breakdown
Voltage (I
E
=0)
Collector-emitter Breakdown
Voltage (VBE=0)
=10µA80V
I
C
=10µA80V
I
C
* Collector-emitter Breakdown
I
Voltage (IB=0)
Emitter-base Breakdown
Voltage (IC=0)
* Collector-emitter Saturation
Voltage
=10mA
C
I
=10µA6V
E
IC=10mA
IC=100mA
I
=300mA
C
IC=500mA
I
=800mA
C
IC=1000mA
* Base-emitter Saturation Voltage IC=10mA
IC=100mA
I
=300mA
C
IC=500mA
IC=800mA
I
=1000mA
C
* DC Current Gain IC=10mA
IC=100mA
IC=300mA
I
=1000mA
C
IC=800mA
I
=500mA
C
High Frequency Current Gain IC=50mA
f = 100 MHz
Collector-base Capacitance IE=0
f = 1 MHz
Emitter-base Capacitance IC=0
f = 1 MHz
** Turn-on Time IC=500mA
IB=50mA
** Turn off Time IC=500mA
IB1=–IB2=
amb
I
B
IB=10mA
I
B
IB=50mA
I
B
IB= 100 mA
I
B
IB=10mA
I
B
IB=50mA
IB=80mA
I
B
V
CE
VCE=1V
VCE=1V
V
CE
VCE=2V
V
CE
VCE=10V
VCB=10V
VCB= 0.5 V
VCC=30V
VCC=30V
50 mA
=100°C
=1mA
=30mA
=80mA
=1mA
=30mA
= 100 mA
=1V
=5V
=1V
1.7
120µAµA
50 V
0.4
0.5
0.6
1.0
1.1
60
90
60
65
40
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
150
0.19
0.21
0.31
0.64
0.75
0.89
0.9
30
60
40
25
20
35
3
10 pF
55 pF
35 ns
60 ns
V
V
V
V
V
V
V
V
V
V
V
V
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