SGS Thomson Microelectronics 2N3700 Datasheet
GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The 2N3700 is a silicon planar epitaxial NPN transistorin JedecTO-18metalcase,intended forsmall
signal, low noise industrial applications.
2N3700
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE M AXI MUM RAT IN GS
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
P
T
stg,Tj
C
tot
Collector-base Voltage (IE=0) 140 V
Collector-emitter Voltage (IB=0) 80 V
Emitter-base Voltage (IC=0) 7 V
Collector Current 1 A
Total Power Dissipation at T
at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
case
≤ 25 °C
≤ 25 °C
≤ 100 °C
0.5
1.8
1
W
W
W
January 1989
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2N3700
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
97
350
°C/W
°C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EB O
V
CE(sat )
V
BE(sat)
h
FE
h
fe
f
T
C
EBO
C
CBO
r
bb’Cb’c
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Collector Cutoff Current (IE=0) VCB=90V
VCB=90V T
amb
=150°C
10
10
Emitter Cutoff Current (IC=0) VEB=5V 10 nA
Collector-base Breakdown
Voltage (IE=0)
* Collector-emitter Breakdown
Voltage (I
B
=0)
Emitter-base Breakdown Voltage
(I
=0)
C
* Collector-emitter Saturation
Voltage
I
=100µA 140 V
C
=30mA 80 V
I
C
=100µA7V
I
E
IC=150mA
IC=500mA
IB=15mA
IB=50mA
0.2
0.5
* Base-emitter Saturation Voltage IC= 150 mA IB= 15 mA 1.1 V
* DC Current Gain
I
= 0.1 mA
C
IC=10mA
I
=150mA
C
IC=500mA
I
=1A
C
IC=150mA
T
=– 55°C
amb
Small Signal Current Gain IC=1mA
f = 1 kHz
Transition Frequency IC=50mA
f = 20 MHz
Emitter-base Capacitance IC=0
f=1MHz
Collector-base Capacitance IE=0
f=1MHz
Feedback Time Constant IC=10mA
f=4MHz
V
=10V
CE
VCE=10V
V
=10V
CE
VCE=10V
V
=10V
CE
VCE=10V
VCE=5V
VCE=10V
VEB= 0.5 V
VCB=10V
VCB=10V
50
90
100
300
50
15
40
80 400
100 MHz
60 pF
12 pF
25 400 ps
nA
µA
V
V
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