SGS Thomson Microelectronics 2N3439, 2N3440 Datasheet
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ NPN TRANSISTOR
DESCRIPTION
The 2N3439, 2N3440 are silicon epitaxial planar
NPN transistors in jedec TO-39 metal case
designed for use in consumer and industrial
line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
2N3439
2N3440
SILICON NPN TRANSISTORS
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
2N3439 2N3440
V
V
V
P
P
T
Collector-Base Voltage (IE = 0) 450 300 V
CBO
Collector-Emitter Voltage (IB = 0) 350 250 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 1 A
I
C
Base Current 0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC10W
tot
Total Dissipation at T
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
≤ 50 oC1W
amb
o
C
o
C
June 1997
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2N3439 / 2N3440
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
CEX
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
for 2N3439 V
for 2N3440 V
for 2N3439 V
for 2N3440 V
for 2N3439 V
for 2N3440 V
= 6 V 20 µA
V
EB
= 360 V
CB
= 250 V
CB
= 300 V
CE
= 200 V
CE
= 450 V
CE
= 300 V
CE
20
20
20
50
500
500
IC = 50 mA
for 2N3439
for 2N3440
350
250
IC = 50 mA IB = 4 mA 0.5 V
Saturation Voltage
V
BE(sat)
∗ Base-Emitter
IC = 50 mA IB = 4 mA 1.3 V
Saturation Voltage
h
∗ DC Current Gain IC = 20 mA VCE = 10 V
FE
h
Small Signal Current
FE
I
= 2 mA VCE = 10 V for 2N34394030
C
IC = 5 mA VCE = 10 V f = 1KHz 25
160
Gain
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Transition frequency IC = 5 mA VCE = 10 V f = 5MHz 15 MHz
T
µA
µA
µA
µA
µA
µA
V
V
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