■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ NPN TRANSISTOR
DESCRIPTION
The 2N3439, 2N3440 are silicon epitaxial planar
NPN transistors in jedec TO-39 metal case
designed for use in consumer and industrial
line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
2N3439
2N3440
SILICON NPN TRANSISTORS
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
2N3439 2N3440
V
V
V
P
P
T
Collector-Base Voltage (IE = 0) 450 300 V
CBO
Collector-Emitter Voltage (IB = 0) 350 250 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 1 A
I
C
Base Current 0.5 A
I
B
Total Dissipation at Tc ≤ 25 oC10W
tot
Total Dissipation at T
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
≤ 50 oC1W
amb
o
C
o
C
June 1997
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2N3439 / 2N3440
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
CEX
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
for 2N3439 V
for 2N3440 V
for 2N3439 V
for 2N3440 V
for 2N3439 V
for 2N3440 V
= 6 V 20 µA
V
EB
= 360 V
CB
= 250 V
CB
= 300 V
CE
= 200 V
CE
= 450 V
CE
= 300 V
CE
20
20
20
50
500
500
IC = 50 mA
for 2N3439
for 2N3440
350
250
IC = 50 mA IB = 4 mA 0.5 V
Saturation Voltage
V
BE(sat)
∗ Base-Emitter
IC = 50 mA IB = 4 mA 1.3 V
Saturation Voltage
h
∗ DC Current Gain IC = 20 mA VCE = 10 V
FE
h
Small Signal Current
FE
I
= 2 mA VCE = 10 V for 2N34394030
C
IC = 5 mA VCE = 10 V f = 1KHz 25
160
Gain
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Transition frequency IC = 5 mA VCE = 10 V f = 5MHz 15 MHz
T
µA
µA
µA
µA
µA
µA
V
V
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TO-39 MECHANICAL DATA
2N3439 / 2N3440
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
mm inch
o
(typ.)
H
G
D A
I
E
F
L
B
P008B
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2N3439 / 2N3440
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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