SGS Thomson Microelectronics 2N2907A, 2N2905A Datasheet
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905A and 2N2907A are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated switching and general purpose
applications.
2N2905A approved to CECC 50002-100,
2N2906A approved to CECC 50002-103
availableon request.
2N2905A
2N2907A
TO-18 TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) -60 V
CBO
Collector-Emitter Voltage (IB=0) -60 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
Collect or Cur rent -0. 6 A
I
C
Total Dissipat i on at T
tot
Stora ge Temperatu re -65 to 200
stg
Max. Operat i ng Juncti on Temperatu re 200
T
j
for 2N2905A
for 2N2907A
at T
for 2N2905A
for 2N2907A
amb
case
≤ 25oC
0.6
0.4
≤ 25oC
3
1.8
W
W
W
W
o
C
o
C
November 1997
1/7
2N2905A/2N2907A
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist an ce Junct ion-Case Max
Thermal Resistance Junction-Ambient Max
TO-39 TO-18
58.3
292
97.3
437.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
I
V
(BR) CBO
CBO
Collector Cut-off
Current (I
CEX
Collector Cut-off
Current (V
BEX
Base C ut-off Cu rrent
(V
BE
∗ Co llec tor-Bas e
E
BE
= -0. 5V )
=0)
= -0. 5V )
V
=-50V
CB
=-50V T
V
CB
= -30 V -50 nA
V
CE
V
= -30 V -50 nA
CE
I
=-10µA-60V
C
case
=150oC
-10
-10
Break dow n Volt age
=0)
(I
E
V
∗ Co llec tor-Em it t er
(BR) CEO
I
=-10mA -60 V
C
Break dow n Volt age
=0)
(I
B
V
(BR)EBO
∗ Emitt er-Base
I
=-10µA-5V
E
Break dow n Volt age
=0)
(I
C
V
∗ Collector- E mitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC C urr ent Gain IC=-0.1mA VCE=-10V
FE
f
C
EBO
Tr ansition Frequenc y VCE=-50V f=100MHz
T
Emitt er Base
IC=-150mA IB=-15mA
=-500mA IB=-50mA
I
C
IC=-150mA IB=-15mA
=-500mA IB=-50mA
I
C
=-1mA VCE=-10V
I
C
=-10mA VCE=-10V
I
C
=-150mA VCE=-10V
I
C
=-500mA VCE=-10V
I
C
I
=-20mA
C
IC=0 VEB= -2 V f = 1MHz 30 pF
75
100
100
100
50
200 MHz
-0.4
-1.6
-1.3
-2.6
300
Capacit a nc e
C
CBO
Collector Base
IE=0 VCB= -10 V f = 1MH z 8 pF
Capacit a nc e
∗∗ Delay Time VCC=-30V IC= -150 mA
t
d
∗∗ Rise Time VCC=-30V IC= -150 mA
t
r
∗∗ Storage Time VCC=-6V IC= -150 mA
t
s
∗∗ Fall Time VCC=-6V IC= -150 mA
t
f
∗∗ Tu rn-on Time VCC=-30V IC= -150 mA
t
on
∗∗ Turn-off Time VCC=-6V IC= -150 mA
t
off
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
∗∗ See test circuit
=-15mA
I
B1
=-15mA
I
B1
=-IB2=-15mA
I
B1
I
=-IB2=-15mA
B1
=-15mA
I
B1
=-IB2=-15mA
I
B1
10 ns
40 ns
80 ns
30 ns
45 ns
100 ns
nA
µA
V
V
V
V
2/7
2N2905A/2N2907A
Normalized DC CurrentGain. Collector-emitter Saturation Voltage.
Collector-baseand Emitter-basecapacitances. Switching Characteristics.
3/7
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