SGS Thomson Microelectronics 2N2907, 2N2905 Datasheet

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

DESCRIPTION

The 2N2905 and 2N2907 are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905) and in Jedec TO-18 (for 2N2907) metal
case. Theyare designed for high speed saturated
switchingand generalpurposeapplication.

2N2905 approved to CECC 50002-102,
2N2907 approved to CECC 50002-103
availableon request.

2N2905
2N2907

TO-18 TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

V
V
V

P

T

Collector-Base Voltage (IE=0) -60 V

CBO

Collector-Emitter V oltage (IB=0) -40 V

CEO

Emitter-Base Voltage (IC=0) -5 V

EBO

Collect or Cur rent -0. 6 A

I

C

Total Dissipat i on at T

tot

Stora ge Temperatu re -65 to 200

stg

Max. Operat i ng Junction Temperatu re 200

T

j

for 2N2905
for 2N2907
at T
for 2N2905
for 2N2907

amb

case

≤ 25oC

0.6

0.4

≤ 25oC

3

1.8

W
W

W
W

o

C

o

C

November 1997

1/5

2N2905/2N2907

THERMAL DATA

R

thj-case

R

thj-amb

Ther mal Resistance Junction- Case Max
Thermal Resistance Junction-Ambient Max

TO-39 TO-18

58.3
292

97.3

437.5

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

I

I

V

(BR) CBO

CBO

Collector Cut-off
Current (I

CEX

Collector Cut-off
Current (V

BEX

Base Cut-o ff Current
(V

BE

∗ Collector-Base

E

BE

= -0. 5V)

=0)

= -0. 5V)

V

=-50V

CB

=-50V T

V

CB

= -30 V -50 nA

V

CE

V

= -30 V -50 nA

CE

I

=-10µA-60V

C

case

=150oC

-20

-20

Break dow n Volt age

=0)

(I

E

V

∗ Collector-Emitter

(BR) CEO

I

=-10mA -40 V

C

Break dow n Volt age

=0)

(I

B

V

(BR)EBO

∗ Emitter-Base

I

=-10µA-5V

E

Break dow n Volt age

=0)

(I

C

V

∗ Co llector-Emitter

CE(sat)

Saturation Voltage

V

∗ Ba se-Emitter

BE(sat)

Saturation Voltage

h

∗ DC Cur rent Gain IC=-0.1mA VCE=-10V

FE

f

C

EBO

Tr ansition Frequency VCE=-20V f=100MHz

T

Emitt er Base

IC=-150mA IB=-15mA

=-500mA IB=-50mA

I

C

IC=-150mA IB=-15mA

=-500mA IB=-50mA

I

C

=-1mA VCE=-10V

I

C

=-10mA VCE=-10V

I

C

=-150mA VCE=-10V

I

C

=-500mA VCE=-10V

I

C

I

=-50mA

C

IC=0 VEB= -2 V f = 1MHz 30 pF

35
50
75

100

30

200 MHz

-0.4

-1.6

-1.3

-2.6

300

Capacit a nc e

C

CBO

Collector Base

IE=0 VCB= -10 V f = 1MHz 8 pF

Capacit a nc e

t

t

∗

Pulsed: Pulse duration =300 µs, duty cycle ≤ 1%

Delay Time VCC=-30V IC= -150 mA

d

Rise Time VCC=-30V IC= -150 mA

t

r

St orage Time VCC=-6V IC= -150 mA

s

Fall T ime VCC=-6V IC= -150 mA

t

f

=-15mA

I

B1

=-15mA

I

B1

=-IB2=-15mA

I

B1

I

=-IB2=-15mA

B1

10 ns

40 ns

80 ns

30 ns

nA
µA

V
V

V
V

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