SGS Thomson Microelectronics 2N2369 Datasheet
HIGH-FREQUENCY SATURATED SWITCH
DESCRIPTION
The 2N2369 is a silicon planarepitaxial NPN transistorinJedecTO-18metalcase.Itis designed specificallyfor high-speed saturated switching applications at current levels from 100 µA to 100mA.
2N2369
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE M AXI MUM RATIN GS
Symbol Parameter Value Unit
V
CBO
V
CES
V
CEO
V
EBO
I
CM
P
tot
T
stg,Tj
Products approved to CECC 50004-022/023 available on request.
Collector-base Voltage (IE=0) 40 V
Collector-emitter Voltage (VBE=0) 40 V
Collector-emitter Voltage (IB=0) 15 V
Emitter-base Voltage (IC= 0) 4.5 V
Collector Peak Current (t = 10 µs) 0.5 A
Total Power Dissipation at T
at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
case
≤ 25 °C
≤ 25 °C
≤ 100 °C
0.36
1.2
0.68
W
W
W
January 1989
1/4
2N2369
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
146
486
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V
(BR) CBO
V
(BR) CE S
Collector Cutoff
Current (I
E
=0)
Collector-base Breakdown
Voltage (I
E
=0)
Collector-emitter Breakdown
Voltage (VBE=0)
V
(BR) CEO
* Collector-emitter Breakdown
Voltage (IB=0)
V
(BR) EBO
Emitter-base Breakdown
Voltage (IC=0)
V
* Collector-emitter Saturation
CE (sat)
Voltage
V
* Base-emitter Saturation
BE (sat)
Voltage
* DC Current Gain IC=10mA
h
FE
f
T
C
CBO
t
s
t
on
t
off
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Transition Frequency IC=10mA
Collector-base Capacitance IE=0
Storage Time IC=10mA
Turn-on Time IC=10mA
Turn-off Time IC=10mA
=20V
V
CB
V
=20V T
CB
=10µA40V
I
C
=10µA40V
I
C
I
=10mA 15 V
C
I
=10µA 4.5 V
E
I
=10mA IB= 1 mA 0.2 0.25 V
C
I
=10mA IB= 1 mA 0.7 0.75 0.85 V
C
I
=100mA
C
IC=10mA
T
=–55°C
amb
f = 100 MHz
f = 1 MHz
IB1=–
IB2=10mA
IB1=3mA
IB1=3mA
=150°C
amb
V
V
CE
CE
=1V
=2V
40
20
VCE=1V
20
V
= 10 V 500 650 MHz
CE
= 5 V 2.5 4 pF
V
CB
VCC=10V
V
= 3 V 9 12 ns
CC
VCC=3V
IB2= – 1.5 mA
613ns
13 18 ns
0.4
30
120
°C/W
°C/W
µA
µA
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