SGS Thomson Microelectronics 2N2222A, 2N2219A Datasheet
2N2219A
DESCRIPTION
The 2N2219A and 2N2222A are silicon planar
epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currentsand lowsaturation voltage.
2N2219A approved to CECC 50002-100,
2N2222A approved to CECC 50002-101
availableon request.
2N2222A
HIGH SPEED SWITCHES
TO-18 TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collect o r -Base Volt age (IE=0) 75 V
CBO
Collect o r -Em i t t er Voltage (IB=0) 40 V
CEO
Emitter-Base Vo ltage (IC=0) 6 V
EBO
Collect o r Curr ent 0.8 A
I
C
Tot al Di ss i pat ion at T
tot
Sto rage Tem perature -65 to 20 0
stg
Max. O per a t ing Junc tion Tem per ature 175
T
j
for 2N2219A
for 2N2222A
at T
for
for 2N2222A
≤ 25oC
amb
25
≤
case
2N2219 A
0.8
o
C
0.5
3
1.8
W
W
W
W
o
C
o
C
June 1999
1/8
2N2219A/2N2222A
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resis t anc e Junction-Case Max
Ther mal Resis t anc e Junction-Ambie nt Max
TO-39 TO-18
50
187.5
83.3
300
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
I
I
I
V
(BR) CBO
CBO
Collect o r Cut -off
Current (I
CEX
Collect o r Cut -off
Current (V
BEX
EBO
Base Cut-off Cur ren t
(V
BE
Emitter Cut-of f Current
(I
C
∗ Col lec tor-Bas e
=-3V)
=0)
E
BE
=0)
=-3V)
V
=60V
CB
=60V T
V
CB
V
= 60 V 10 nA
CE
V
= 60 V 20 nA
CE
V
=3V 10 nA
EB
I
=10µA75V
C
case
= 150oC
10
10
Break dow n Volt age
=0)
(I
E
V
∗ Collector-Emitter
(BR) CEO
I
=10mA 40 V
C
Break dow n Volt age
=0)
(I
B
V
(BR)EBO
∗ Emitter- Base
I
=10µA6V
E
Break dow n Volt age
=0)
(I
C
V
V
∗ Collector-Emitter
CE(sat)
Sat urat ion Volt age
Base-Emitter
∗
BE(sat)
Sat urat ion Volt age
h
∗ DC Current G ain IC=0.1mA VCE=10V
FE
h
∗ SmallSignalCurrent
fe
Gain
f
Tr ansit i on Frequ enc y IC=20mA VCE=20V
T
IC= 150 m A IB=15mA
= 500 m A IB=50mA
I
C
I
= 150 m A IB=15mA
C
= 500 m A IB=50mA
I
C
=1mA VCE=10V
I
C
=10mA VCE=10V
I
C
= 150 m A VCE=10V
I
C
= 500 m A VCE=10V
I
C
= 150 m A VCE=1V
I
C
=10mA VCE=10V
I
C
=-55oC
T
amb
IC=1mA VCE=10V f=1KHz
=10mA VCE=10V f=1KHz5075
I
C
0.6 1.2
35
50
75
100
40
50
35
300 MHz
0.3
1
2
300
300
375
f=100MHz
C
EBO
Emitter Base
IC=0 VEB=0.5V f=100KHz 25 pF
Capacit a nc e
C
CBO
Collect o r Bas e
IE=0 VCB=10V f=100KHz 8 pF
Capacit a nc e
R
e(hie)
Real Part of Input
Im pedance
∗
Pulsed: Pulse duration= 300 µs, duty cycle ≤ 1%
IC=20mA VCE=20V
f = 300MHz
60 Ω
nA
µA
V
V
V
V
2/8
2N2219A/2N2222A
ELECTRICAL CHARACTERISTICS
(continued)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
NF Noise Figure I
h
h
h
t
d
t
r
t
s
t
f
r
bb’Cb’c
Input I m peda nc e IC=1mA VCE=10V
ie
Reverse Voltage R atio IC=1mA VCE=10V
re
Out put A dmittance IC=1mA VCE=10V
oe
Delay T ime V
∗∗
Rise Ti m e V
∗∗
Storage Time V
∗∗
Fall Time V
∗∗
Feedbac k T ime
Const ant
∗
Pulsed: Pulse duration= 300 µs, duty cycle ≤ 1%
See test circuit
∗∗
=0.1mA VCE=10V
C
f=1KHz R
=10mA VCE=10V
I
C
=10mA VCE=10V
I
C
=10mA VCE=10V
I
C
=30V IC= 150 m A
CC
=15mA VBB=-0.5V
I
B1
=30V IC= 150 m A
CC
=15mA VBB=-0.5V
I
B1
=30V IC= 150 mA
CC
=-IB2=15mA
I
B1
=30V IC= 150 mA
CC
=-IB2=15mA
I
B1
g
=1K
Ω
IC=20mA VCE=20V
f=31.8MHz
2
0.25
5
25
4dB
8
1.25kΩk
8
4
35
200
10 ns
25 ns
225 ns
60 ns
150 ps
10
10
µ
µS
Ω
-4
-4
S
3/8
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