SGS Thomson Microelectronics 2N2102 Datasheet
GENERAL PURPOSE AMPLIFIER ANDSWITCH
DESCRIPTION
The 2N2102 is a silicon planarepitaxial NPN transistorin Jedec TO-39 metalcase. It is intendedfor
awidevarietyofsmall-signalandmediumpowerapplications in military andindustrial equipments.
2N2102
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE M AXI MUM RATI N GS
Symbol Parameter Value Unit
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg,Tj
Collector-base Voltage (IE=0) 120 V
Collector-emitter Voltage (IB=0) 65 V
Collector-emitter Voltage (RBE≤ 10 Ω)80V
Emitter-base Voltage (IC=0) 7 V
Collector Current 1 A
Total Power Dissipation at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
≤ 25 °C
≤ 25 °C
1
5
W
W
January 1989
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2N2102
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
35
175
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR) CBO
V
CEO (sus)
V
CE (sat)
V
BE (sat )
h
FE
h
fe
NF Noise Figure I
C
CBO
C
EBO
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Collector Cutoff Current
(IE=0)
Emitter Cutoff Current
(IC=0)
Collector-base Breakdown
Voltage (I
E
=0)
* Collector-emitter Sustaining
Voltage (I
B
=0)
* Collector-emitter Saturation
Voltage
* Base-emitter Saturation
Voltage
VCB=60V
VCB=60V T
V
=5V 5 nA
EB
=100µA 120 V
I
C
=30mA 65 V
I
C
= 150 mA IB= 15 mA 0.5 V
I
C
I
= 150 mA IB= 15 mA 1.1 V
C
* DC Current Gain IC=10µA
IC=100µA
I
=10mA
C
IC=150mA
IC=500mA
I
=1A
C
High Frequency Current
Gain
IC=50mA
f=20MHz
=300µA
C
BW = 1 Hz
Collector-base Capacitance IE=0
f = 1 MHz
Emitter-base Capacitance IC=0
f = 1 MHz
2
=150°C
amb
V
=10V
CE
VCE=10V
V
=10V
CE
VCE=10V
VCE=10V
V
=10V
CE
=10V 6
V
CE
10
20
35
40
25
10
2
120
VCE=10V
f = 1 KHz
R
=510Ω
G
V
=10V 15 pF
CB
= 0.5 V 80 pF
V
EB
8dB
°C/W
°C/W
nA
µA
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