SGS Thomson Microelectronics 2N1893 Datasheet
GENERAL PURPOSE HIGH-VOLTAGETYPE
DESCRIPTIO N
The 2N1893 is a silicon planar epitaxial NPN transistorinJedec TO-39metal case,designed for use
inhigh-performance amplifier,oscillator andswitching circuits.
It provides greater voltage swings in oscillator and
amplifier circuits and more protection in inductive
switchingcircuits due toits 120 V collector-to-base
voltage rating.
Productsapproved to CECC50002-104 available onrequest.
2N1893
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXI MUM RATIN G S
Symbol Parameter Value Unit
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg,Tj
Collector-base Voltage (IE=0) 120 V
Collector-emitter Voltage (RBE≤ 10 Ω)100V
Collector-emitter Voltage (IB=0) 80 V
Emitter-base Voltage (IC=0) 7 V
Collector Current 0.5 A
Total Power Dissipation at T
at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
case
≤ 25 °C
≤ 25 °C
≤ 100 °C
0.8
3
1.7
W
W
W
October 1988
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2N1893
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
58
219
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR) CBO
V
(BR)CER
V
(BR)CEO
V
(BR) EBO
V
CE (s at )
V
BE (sat)
h
FE
h
fe
f
T
C
EBO
C
CBO
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Collector Cutoff Current
(IE=0)
Emitter Cutoff Current
(IC=0)
Collector-base Breakdown
Voltage (IE=0)
* Collector-emitter Breakdown
Voltage (R
BE
≤ 10 Ω)
Collector-emitter Breakdown
Voltage (I
B
=0)
Emitter-base Breakdown
Voltage (IC=0)
* Collector-emitter Saturation
Voltage
* Base-emitter Saturation
Voltage
VCB=90V
VCB=90V T
V
=5V 10 nA
EB
I
=100µA 120 V
C
= 10 mA 100 V
I
C
=10mA 80 V
I
C
=100µA7 V
I
E
IC=50mA
IC=150mA
IC=50mA
IC=150mA
* DC Current Gain IC= 0.1 mA
IC=10mA
I
=150mA
C
IC=10mA
T
=–55°C
amb
Small Signal Current Gain IC=1mA
f = 1 kHz
I
=5mA
C
f = 1 kHz
Transition Frequency IC=50mA
f=20MHz
Emitter-base Capacitance IC=0
f = 1 MHz
Collector-base Capacitance IE=0
f = 1 MHz
10
=150°C
amb
IB=5mA
IB=15mA
IB=5mA
IB=15mA
V
=10V
CE
VCE=10V
V
=10V
CE
20
35
40
0.82
0.96
50
80
80
15
1.2
5
0.9
1.3
120
VCE=10V
20
V
=5V
CE
30
V
=10V
CE
45
V
= 10 V 50 70 MHz
CE
= 0.5 V 55 85 pF
V
EB
V
=10V 13 15 pF
CB
40
70
85
150
°C/W
°C/W
nA
µA
V
V
V
V
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