SWITCHESAND UNIVERSAL AMPLIFIERS
DESCRIPT I ON
The 2N1613 and2N1711 aresiliconplanar epitaxial
NPN transistors in Jedec TO-39 metal case. They
aredesignedfor use in high-performance amplifier,
oscillator and switchingcircuits.
The 2N1711 is also used toadvantage inamplifiers
wherelow noise is animportant factor.
Products approved to CECC 50002-104 available onrequest.
2N1613
2N1711
TO-39
INT ERNAL SCHEM ATIC DI A GRA M
ABSOLUTE M AXI MUM RATI N GS
Symbol Parameter Value Unit
V
CBO
V
CER
V
EBO
I
C
P
tot
T
stg,Tj
Collector-base Voltage (IE=0) 75 V
Collector-emitter Voltage (RBE≤ 10 Ω)50V
Emitter-base Voltage (IC=0) 7 V
Collector Current 500 mA
Total Power Dissipation at T
at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
case
≤ 25 °C
≤ 25 °C
≤ 100 °C
0.8
3
1.7
W
W
W
January 1989
1/5
2N1613-2N1711
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
58
219
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR) CBO
V
(BR)CER
V
(BR) EBO
V
CE (sat)
V
BE (sat)
h
FE
h
FE
h
fe
Collector Cutoff Current
(IE=0)
Emitter Cutoff Current
(IC=0)
Collector-base Breakdown
Voltage
VCB=60V
VCB=60V T
V
=5V
EB
I
= 0.1 mA 75 V
C
* Collector-emitter
I
Breakdown Voltage
(R
≤ 10 Ω)
BE
Emitter-base Breakdown
Voltage (IC=0)
* Collector-emitter
Saturation Voltage
* Base-emitter Saturation
Voltage
=10mA 50 V
C
I
= 0.1 mA 7 V
E
I
= 150 mA IB= 15 mA 0.5 1.5 V
C
I
= 150 mA IB= 15 mA 0.95 1.3 V
C
* DC Current Gain for 2 N16 13
I
= 0.01 mA
C
IC= 0.1 mA
IC=10mA
I
=150mA
C
IC=500mA
I
=10mA
C
T
=–55°C
amb
* DC Current Gain for 2 N17 11
IC= 0.01 mA
I
= 0.1 mA
C
IC=10mA
IC=150mA
I
=500mA
C
IC=10mA
T
=55°C
amb
Small Signal Current Gain for 2N16 13
I
=1mA
C
f = 1 kHz
=150°C
amb
for 2N16 13
for 2N17 11
V
=10V
CE
VCE=10V
VCE=10V
V
=10V
CE
VCE=10V
V
=10V
CE
=10V
V
CE
V
=10V
CE
VCE=10V
VCE=10V
V
=10V
CE
VCE=10V
=10V
V
CE
20
35
40
20
20
20
35
30
35
50
80
80
55
35
60
80
130
130
75
65
70
10
10
10
5
120
300
150
for 2 N1711
f
t
C
EBO
C
CBO
Transition Frequency IC=50mA
Emitter-base Capacitance IC=0
Collector-base
Capacitance
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
I
=1mA
C
f = 1 kHz
f = 20 MHz
f=1MHz
IE=0
f=1MHz
V
=10V
CE
70
135
300
VCE=10V
for 2N16 13
for 2N17 11
V
= 0.5 V 50 80 pF
EB
V
=10V 18 25 pF
CB
60
70
80
100
°C/W
°C/W
nA
µA
nA
nA
MHz
MHz
2/5
2N1613-2N1711
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
NF Noise Figure I
h
ie
h
re
h
oe
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Input Impedance IC=1mA
Reverse Voltage Ratio IC=1mA
Output Admittance IC=1mA
= 0.3 mA
C
R9=510Ω
f = 1 KHz
f = 1 kHz
f = 1 kHz
VCE=10V
f = 1 kHz
for 2N16 13
for 2N17 11
VCE=5V
for 2N16 13
for 2N17 11
VCE=5V
for 2N16 13
for 2N17 11
VCE=5V
for 2N16 13
for 2N17 11
6
3.5
2.2
4.4
3.6x10
7.3x10
12.5
23.8
12
8
–4
–4
dB
dB
kΩ
kΩ
µS
µS
3/5
2N1613-2N1711
TO39 MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
o
L45
(typ.)
4/5
I
H
G
F
L
DA
E
B
P008B
2N1613-2N1711
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consequences of use of suchinformation nor forany infringementof patents or other rights of third partieswhich mayresults from its use. No
license is grantedbyimplication or otherwise under anypatent or patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subject to changewithout notice. This publication supersedes and replaces allinformation previouslysupplied.
SGS-THOMSON Microelectronicsproductsare not authorizedfor use ascritical componentsin life supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994SGS-THOMSON Microelectronics- All RightsReserved
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5/5
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