SGS Thomson Microelectronics 1N6263 Datasheet
®
1N 6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.
Primarly intended for high lev el UHF/VHF detection
and pulse application with broad dynamic range.
ABSOLUTE RAT INGS (limiting values)
Symbol Parameter Value Unit
V
I
FSM
T
RRM
I
F
stg
T
T
L
Repetitive Peak Reverse Voltage 60 V
Forward Continuous Current*
Surge non Repetitive Forward Current*
T
t
p
= 25
a
≤ 1s
C
°
Storage and Junction Temperature Range - 65 to 200
j
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
DO 35
(Glass)
15 mA
50 mA
- 65 to 200
230
C
°
C
°
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 400
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
* *
V
F
I
* *
R
T
= 25°CI
amb
= 25°CI
T
amb
T
= 25°CI
amb
= 25°CV
T
amb
= 10µA
R
= 1mA
F
= 15mA
F
= 50V
R
60 V
0.41 V
1
0.2
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
τ
* On infinite heatsink with 4mm lead length
** Pulse test: t
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
= 25°CV
T
amb
T
= 25°CI
amb
300µs δ < 2%
≤
p
.
= 0V f = 1MHz
R
= 5mA Krakauer Method
F
August 1999 Ed: 1A
2.2 pF
100 ps
C/W
°
µ
A
1/3
1N 6263
Fig.1 :
Forward current versus forward voltage
(typical values).
Fig.2 :
Capacitance C versus reverse applied
voltage V
(typical values).
R
Fig.3 :
Reverse current versus ambient
temperature.
Fig.4 :
Reverse current versus continuous
reverse voltage (typical values).
2/3
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