SGS-THOMSON VIPer31SP Technical data

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BATTERY CHARGER PRIMARY I.C.

TYPE V

DSS

VIPer31SP 600 V 1 A 6.5 Ω

I

R

n

DS(on)

VIPer31SP

ADVANCE DATA

10

FEATURE

■ RECTANGULARCHARACTERISTIC,

WITHOUT OPTOCOUPLER

■ INTERNALLY TRIMMED CURRENT

REFERENCE

■ FIXEDSWITCHING FREQUENCY,

ADJUSTABLEUP TO 150KHZ

■ AUXILIARYVOLTAGEREGULATOR

■ SOFT STARTANDSHUT DOWNCONTROL

■ AUTOMATIC BURSTMODEOPERATIONIN

STAND-BY CONDITION ABLE TO MEET
”BLUE ANGEL” NORM(<1WTOTALPOWER
CONSUMPTION)

■ UNDERVOLTAGE LOCK-OUTWITH

HYSTERESIS

■ INTEGRATED STARTUP SUPPLY

■ AVALANCHERUGGED

■ OVERVOLTAGEPROTECTION

■ OVERTEMPERATUREPROTECTION

■ CYCLEBY CYCLECURRENT LIMITATION

■ DEMAGNETISATIONCONTROL

BLOCK DIAGRAM

VCC

29 V

ON/OFF

UVLO

LOGIC

+

-

OVERTEMP.

DETECTOR

10 V

REGULATOR

2.6 V

­+

1

Power SO-10

DESCRIPTION

VIPer31SP combines on the same silicon chip a
PWM control dedicated to output current
regulationtogetherwithan optimisedhighvoltage
avalanche rugged vertical power MOSFET
(600V/1A). Typical applications cover battery
chargers with constant current and constant
voltage output characteristics, without any
optocoupler between primary and secondary
sections. Typical output power capability is 15 W
in wide range condition and 30 W in single range
or with doubler configuration. Burst mode
operation is an additional feature of this device,
offering the possibility to operate in no load
condition with an input power as low as 1W. This
feature insures the compliance towards ”Blue
Angel”norm andothersimilar ones.

DRAINOSCCOMPFB

OSCILLATOR

-

+

R1

FF

R3 R4

Q

PWM

LATCH

CURRENT

REGULATION

200 ns

BLANKING

+

-

1.5 A

R2

-+

January 1998

VDD GND CREF CSENSE DSENSE SOURCE

SC12000

1/16

VIPer31SP

ABSOLUTEMAXIMUM RATING

Symb o l Para met er Val u e Uni t

V

I

I

DREV

V

V

I

I

DSENSE

V

I

D(AV)

E

D(AV)

P

T

T

THERMALDATA

R

thj-case

R

thj-a mb.

Note 1 : This thermal resistancecorresponds to the standard mounting ona FR4 typeprinted circuit board.

CURRENT AND VOLTAGECONVENTIONS

Continuous Dra in- Source Voltage (T j = 25 to 125oC) 600 V

DS

Maxim um DC Dra in Current Int er nall y Li mited A

D

Reverse DC Drain Current -2.5 A
Supply Volt a ge 0 to 35 V

CC

Volta ge Range Input (CS ENSE, CO MP, FB , OSC , CR E F ) -03 to V

X

Current I nput (CS ENSE, CO MP, FB, OSC, CR EF 10 mA

X

DD

Current Rang e Input (DSENS E) -10 to +10 mA

esd Elect r os ta t ic Discharge ( R = 1. 5 KΩ C=100pF)

Avalanc h e Dr ain-S o ur ce Current, Repetitive or Not-Repetit iv e

=100oC, Pulse Width Limited by TJmax)

(T

C

Avalanc h e Dr ain-S o ur ce Energy, R epetiti ve or Not - R epet i t ive

=25oC, Pulse Width Limited by TJmax)

(T

C

Power Dissipat ion at TC=25oC62W

tot

Junct ion O per at i ng Temperatur e -40 to 150

j

Stora ge Temperatu re -65 to 150

stg

2000 V

TBD A

TBD mJ

Ther mal Resist anc e Junction-cas e Max 2. 0
Ther mal Resist anc e Junction-ambient (Not e1) Max 50

o
o

o

C/W

o

C/W

V

C
C

ICOMP

IFB

ICC

6

8

2

VCC

VDD

OSC

VIPer31

2.6V

VOLTAGE CONTROL

GND

10

IDD

IOSC

VCOMP VFB VCC VDD VOSC VCREF VCSENSE VSOURCE VDRAIN VDSENSE

COMPFB

­+

93

ICREF ICSENSE

111

CURRENT
CONTROL

CSENSECREF

74

DRAINDSENSE

SOURCE

5

ISOURCE

RS

IDSENSE

IDRAIN

SC12020

2/16

CONNECTION DIAGRAMS(top View)

VIPer31SP

PINSFUNCTIONAL DESCRIPTION
DRAINPIN:

Integrated power MOSFET drain pin. It provides
internal bias current during start-up via an
integrated high voltage current source which is
switched off during normal operation. The device
is able to handle an unclamped current during its
normal operation, assuring self protectionagainst
voltage surges, PCB stray inductance, and
allowing a snubberless operation for low output
power.

SOURCEPIN:

Integrated power MOSFET source pin. To be
connectedto an external current sense resistance
which definesthe output currentvalue.

GND

Used as the signal reference for all low level
signals. To be connected to the cold point of the
currentsenseresistance.

V

PIN:

DD

It corresponds to the low voltage supply of the
control part of the circuit. If Vdd goes below 6V,
the circuit is shut down and the start-up current
source is activated. The circuit resumes normal
operation when the V

voltage reaches 8V. An

DD

internal low drop linear regulator generates the
V

voltage from the VCCone, thus limiting its

DD

value at 10V.

PIN:

V

CC

This pin receives the auxiliary unregulated
voltage from the main transformer, which can
range from 7V up to 27V during normal operation.
It delivers a start up current of 1.5mA during the
shut down phase. The V

pin is also connected

CC

to an internal 10V low drop regulator which
providesthe V

DD

voltage.

SENSE

PIN:

C

Receives the voltage of the current sense
resistor, representativefrom the power MOSFET
drain current.

C

PIN:

REF

Serves as a reference for the peak power
MOSFETdrain current. It is also the output of the
curent regulation function, which adjusts this
reference voltage to keep the average output
current constant. To be connected to an external
filteringcapacitor.

D

SENSE

PIN:

Detects the full demagnetisation of the main
transformer, in order to drive the current
regulation function. Refer to the application part
for further details. It is also used to prevent any
new turn on of the power MOSFET during the
demagnetisationphase.

FB PIN:

This is the inverting input of the voltage mode
error amplifier. This error amplifier is in charge of
the limitation of the V

voltage when the output

CC

currentis lower than the nominal regulatedone.

COMP PIN:

This is the output of the voltage mode error
amplifier. An external R-C network connected
between this pin and the FB pin defines the
bandwidth of the voltage regulation loop, and
insures the stability ofthe converter.

OSC PIN:

An RT-CT networkmust be connected on that pin
to define the switching frequency. Note that
despite the connection of RT to V
significant frequency change occurs for V

,no

DD

DD

varying from 7V to 10V. It provides also a
synchronisationcapability, when connected to an
externalfrequencysource.

3/16

VIPer31SP

ELECTRICAL CHARACTERISTICS (TJ=25oC, VCC= 12 V, unless otherwise specified)

POWERSECTION

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

BV

I

DSS

R

DS(on)

C

OSS

(1) On Inductive Load,Clamped.

SUPPLY SECTION

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

I

CCch

I

CC0

I

CC1

I

CC2

V

DDo f f

V

DDo n

V

DDhyst

V

DDreg

V

I

DDsc

Drain-S o ur ce Vol ta ge ID=1mA V

DSS

Of f - State Drain Current VDS=500V V
St at i c D rain S ou r ce on

Resistance

t

Fall Time ID = 0.3 A Vin= 300 V (1)

f

ID=0.3A V

=25oC

T

J

= 100oC

T

J

= 0 V 600 V

COMP

=0V 1 mA

COMP

=0V

SENSE

250 ns

(see fig. 1)

Rise Ti me ID=0.3A Vin= 300 V ( 1 )

t

r

TBD ns

(see fig. 1)

Out put Capacitanc e VDS=25V TBD pF

St art - u p Char ging
Current

Oper at i ng Supply
Current

Oper at i ng Supply

VDD=0toV

DDon

VDS= 250 V

-1.5 mA

(see fig. 2)
FSW=0KHz

10 mA

(see fig. 2)
FSW=100KHz TBD mA

Current
Oper at i ng Supply

FSW=200KHz TBD mA

Current
Undervoltage

(see fig. 2) 6 V

Shut dow n
Undervoltage Reset (see f ig. 2) 8 V

Hyst eresis St art - up (see f ig. 2) TBD 2 V
Out put Volt age (see f ig. 2) TBD TBD V
Drop Out Volt age VCC=9V IDD=TBDmA

DO

(see fig. 2)

Short Cir cuit Current VDD=0V TBD mA

6.5
10

TBD mV

Ω
Ω

OSCILLATORSECTION

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

F

SW1

F

SW2

V

OSC HI

V

OSC LO

Os cillator Freque ncy
Init i al Acc urac y

Os cillator Freque ncy
Total Variation

=8.2K

R

T

=25oC(seefig.3)

T

J

=8.2K

R

T

V

DD

Ω

Ω

=7to10V

CT= 3300 pF

CT= 3300 pF

Os cillator Peak V ol t age (1) 6.2 V
Os cillator Valley

(1) 2. 5 V

Voltage

(1) The peak and valley voltages areused internally by the voltagemode PWM. Thesawtooth generated by the oscillator is compared to
the COMP pin voltage to limit theduty cycle of thepower mosfet switch.See block diagram on page 1.

4/16

TBD 50 TBD KHz

TBD 50 TBD KHz

VIPer31SP

ELECTRICAL CHARACTERISTICS (continued)

ERRORAMPLIFIERSECTION

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

V

REF

∆V

GBW Unity G ain Bandwidth (see f ig. 4) 400 KHz

A

VOL

I

V

COMP LO

V

COMP HI

I

COMP LO

I

COMP HI

CURRENTREGULATIONSECTION

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

V

REG

t

V

DSENSEth

V

DSENSEc l

Reference Voltage I
Tem peraure Variat ion TB D TBD %

REF

Open Loop Volt age

=0mA TJ=25oC TBD 2.6 TBD V

COMP

(see fig. 4) TBD 5 0 dB

Gain
Input Bia s Cur re nt VFB=5V 2.5 5 µA

FB

Out put Low Lev el
Out put High Le v el
Out put Low Cur rent

=-100µAVFB=5V

I

COMP

= 100 µAVFB=0V

I

COMP

V

=5V VFB=5V 3.5 mA

COMP

1V
9V

Capabili t y
Out put High Current

V

=5V VFB=0V -3.5 mA

COMP

Capabili t y

Reference Voltage
Current Sense Delay

d

(see fig. 5) 320 350 380 mV
(See f ig 1) 350 ns

to Turn-off
Demagn et iz a t ion

(see fig. 6) 2.6 V
Detector T h re shol d
Voltage

Demagn et iz a t ion

I

DSENSE

= 10 m A (see f ig. 6) 6 V
Detector Cl am ping
Voltage

PROTECTION SECTION

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

I

Dli m

Peak Drain Cur rent
Limitati on

t

Current Limita t ion

b

Blanking Time

V

CClim

VCCOve rv oltage
Threshold

V

CChystVCC

Hyst eresis

T

Ther mal S hut do wn

SD

Tem perature

T

SDhyst

Ther mal S hut do wn
Hyst eresis

Ove rv oltage

=0 (see fig. 9)

R

S

=0 (see fig. 9)

R

S

VFB= 0 V (see fig. 7) 26 35 V

VFB= 0 V (see fig. 7) 2 V

(see fig. 8) 150

(see fig. 8) TB D

12.5A

1.2 µs

o

o

C

C

5/16