SGS-THOMSON TODV 640 Technical data
TODV 640 ---> 1240
March 1995
ALTERNISTORS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
Tc = 75 °C40 A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp = 2.5 ms 590 A
tp = 8.3 ms 370
tp = 10 ms 350
I
2
tI
2
t value tp = 10 ms 610 A
2
s
dI/dt Critical rate of rise of on-state current
Gate supply : I
G
= 500mA di
G
/dt = 1A/µs
Repetitive
F = 50 Hz
20 A/µs
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
RD91
(Plastic)
.HIGHCOMMUTATION: > 142A/ms (400Hz)
.INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: EB1734)
.HIGH VOLTAGECAPABILITY: V
DRM
=1200 V
DESCRIPTION
Symbol Parameter TODV Unit
640 840 1040 1240
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
600 800 1000 1200 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The TODV 640 ---> 1240 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
A
2
G
A
1
1/5
查询TODV 640 ---> 1240供应商
GATECHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth (c-h) Contact (case-heatsink) with grease 0.1 °C/W
Rth (j-c) DC Junction to case for DC 1.2 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 0.9 °C/W
Symbol Test Conditions Quadrant Value Unit
I
GT
V
D
=12V (DC) R
L
=33Ω Tj=25°C I-II-III MAX 200 mA
V
GT
V
D
=12V (DC) R
L
=33Ω Tj=25°C I-II-III MAX 1.5 V
V
GD
V
D
=V
DRM
R
L
=3.3kΩ Tj=125°C I-II-III MIN 0.2 V
tgt V
D
=V
DRM
I
G
= 500mA
dI
G
/dt = 3A/µs
Tj=25°C I-II-III TYP 2.5 µs
I
L
I
G
=1.2 I
GT
Tj=25°C I-III TYP 100 mA
II 200
I
H
*I
T
= 500mA gate open Tj=25°C TYP 50 mA
V
TM
*I
TM
= 60A tp= 380µs Tj=25°C MAX 1.8 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.02 mA
Tj=125°C MAX 8
dV/dt * Linear slope up to V
D
=67%V
DRM
gate open
Tj=125°C MIN 500 V/µs
(dI/dt)c * (dV/dt)c = 200V/µs Tj=125°C MIN 35 A/ms
(dV/dt)c = 10V/µs 142
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
P
G (AV)
=1W P
GM
= 40W (tp = 20 µs) I
GM
=8A(tp=20µs) V
GM
= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TODV 640 ---> 1240
2/5
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