SGS-THOMSON TIP130, TIP131, TIP132, TIP135, TIP136 Technical data
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COMPLEMENTARY SILICON POWER
TIP131, TIP132,TIP135 AND TIP137 ARE
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The TIP130, TIP131 and TIP132 are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration, mounted in
Jedec TO-220 plastic package. They are intented
for use inpower linearand switching applications.
The complementary PNP types are TIP135,
TIP136and TIP137.
TIP130/131/132
TIP135/136/137
DARLINGTON TRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Typ. = 5 KΩ R2Typ. = 150 Ω
R
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val ue Uni t
NPN TI P 130 TIP131 TI P 1 32
PNP TIP135 TIP136 TI P 1 37
V
V
V
I
P
T
* For PNP types voltage and currentvalues are negative.
Collector-B as e Vol ta ge (IE= 0) 60 80 100 V
CBO
Collector-E m it t e r Volt age (IB= 0) 60 80 100 V
CEO
Emitter- Base Volt age (IC=0) 5 V
EBO
Collector Current 8 A
I
C
Collector P e ak Current 12 A
CM
Base Current 0.3 A
I
B
Total Dissipation at T
tot
St orage Tem pera tu r e -65 to 150
stg
Max. Operati ng Junct ion T emper a t ure 150
T
j
T
case
amb
≤ 25 oC
≤ 25 oC
70
2
W
W
o
C
o
C
October 1995
1/4
TIP130/TIP131/TIP132/TIP135/TIP136/TIP137
THERMAL DATA
R
thj-case
R
thj-amb
Therm al Res is t anc e Juncti on-c as e Max
Therm al Res is t anc e Juncti on-am b ient Max
1.78
63.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Conditio ns Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(sus)
Collect or Cut-off
Current (I
B
=0)
Collect or Cut-off
Current (I
B
=0)
Emitter Cut-off Current
(I
=0)
C
* Collector -Emitter
Sust aining Voltage
=0)
(I
B
V
* Collect or- E m it ter
CE(sat)
Sat urat ion Vo lt age
V
* Base- Em i t t er Volta ge IC=4A VCE= 4 V 2.5 V
BE(on)
h
* DC Cur re nt G ain IC=1A VCE=4V
FE
* For PNP types voltage and current values are negative.
V
= Half Rat es V
CE
V
= Half Rat es V
CB
=5V 5 mA
V
EB
I
=30mA
C
for T I P 130/ 135
for T I P 131/ 136
for TIP132/ 137
CEO
CBO
60
80
100
IC=4A IB=16mA
=6A IB=30mA
I
C
0.5 mA
0.2 mA
2
4
500
=4A VCE=4V
I
C
1000 15000
V
V
V
V
V
2/4
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