SGS-THOMSON TIP130, TIP131, TIP132, TIP135, TIP136 Technical data
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TIP130/131/132
TIP135/136/137
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and TIP137.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 KΩ |
R2 Typ. = 150 Ω |
ABSOLUTE MAXIMUM RATINGS
Symb ol |
Parameter |
|
Valu e |
|
Unit |
|
NPN |
T IP130 |
TIP131 |
T IP132 |
|
|
PNP |
T IP135 |
TIP136 |
T IP137 |
|
VCBO |
Collector-Base Voltage (IE = 0) |
60 |
80 |
100 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
60 |
80 |
100 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
|
5 |
|
V |
IC |
Collector Current |
|
8 |
|
A |
ICM |
Collector Peak Current |
|
12 |
|
A |
IB |
Base Current |
|
0.3 |
|
A |
Ptot |
Total Dissipation at Tc ase ≤ 25 oC |
|
70 |
|
W |
|
Tamb ≤ 25 oC |
|
2 |
|
W |
Ts tg |
Storage Temperature |
|
-65 to 150 |
|
oC |
Tj |
Max. Operating Junction Temperature |
|
150 |
|
oC |
* For PNP types voltage and current values are negative.
October 1995 |
1/4 |
TIP130/TIP131/TIP132/TIP135/TIP136/TIP137
THERMAL DATA
Rthj -ca se |
Thermal |
Resistance |
Junction-case |
Max |
1.78 |
oC/W |
Rthjamb |
Thermal |
Resistance |
Junction-ambient |
Max |
63.5 |
oC/W |
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l |
Parameter |
T est Con ditio ns |
Min . T yp. Max. Uni t |
|||
ICEO |
Collector Cut-off |
VCE = Half Rates VCEO |
|
0.5 |
mA |
|
|
Current (IB = 0) |
|
|
|
|
|
ICBO |
Collector Cut-off |
VCB = Half Rates VCBO |
|
0.2 |
mA |
|
|
Current (IB = 0) |
|
|
|
|
|
IEBO |
Emitter Cut-off Current |
VEB = 5 V |
|
|
5 |
mA |
|
(IC = 0) |
|
|
|
|
|
VCEO(sus)* |
Collector-Emitter |
IC = 30 mA |
|
|
|
|
|
Sustaining Voltage |
for T IP130/135 |
|
60 |
|
V |
|
(IB = 0) |
for T IP131/136 |
|
80 |
|
V |
|
|
for TI P132/137 |
|
100 |
|
V |
VCE(sat )* |
Collector-Emitter |
IC = 4 A |
IB = 16 mA |
|
2 |
V |
|
Saturation Voltage |
IC = 6 A |
IB = 30 mA |
|
4 |
V |
VBE(on)* |
Base-Emitter Voltage |
IC = 4 A |
VCE = 4 V |
|
2.5 |
V |
hFE* |
DC Current Gain |
IC = 1 A |
VCE = 4 V |
500 |
|
|
|
|
IC = 4 A |
VCE = 4 V |
1000 |
15000 |
|
* For PNP types voltage and current values are negative.
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