SGS-THOMSON STH60N10, STH60N10FI, STW60N10 Technical data

STH60N10

STH60N10/FI

STW60N10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE	VDSS	R DS ( on)	ID
STH60N10	100 V	< 0.025 Ω	60 A
STH60N10FI	100 V	< 0.025 Ω	36 A
STW60N10	100 V	< 0.025 Ω	60 A

■TYPICAL RDS(on) = 0.02 Ω

■AVALANCHE RUGGED TECHNOLOGY

■100% AVALANCHE TESTED

■REPETITIVE AVALANCHE DATA AT 100oC

■LOW GATE CHARGE

■VERY HIGH CURRENT CAPABILITY

■175oC OPERATING TEMPERATURE

■APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SOLENOID AND RELAY DRIVERS

■REGULATORS

■DC-DC & DC-AC CONVERTERS

■MOTOR CONTROL, AUDIO AMPLIFIERS

■AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

TO-247

3

2

1

			3	3
		2		2
	1			1
TO-218
				ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value		Unit
		STH/STW60N10	STH60N10FI
VD S	Drain-source Voltage (VGS = 0)	100		V
VDG R	Draingate Voltage (RGS = 20 kΩ)	100		V
VGS	Gate-source Voltage	± 20		V
ID	Drain Current (continuous) at Tc = 25 oC	60	36	A
ID	Drain Current (continuous) at Tc = 100 oC	42	22	A
ID M(•)	Drain Current (pulsed)	240	240	A
Ptot	Total Dissipation at Tc = 25 oC	200	70	W
	Derating Factor	1.33	0.56	W/oC
VISO	Insulation Withstand Voltage (DC)		4000	V
Tstg	Storage Temperature	-65 to 175	-65 to 150	oC
Tj	Max. Operating Junction Temperature	175	150	oC

(•) Pulse width limited by safe operating area

May 1993

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STH60N10/FI STW60N10

THERMAL DATA

					TO-218/TO-247 ISOWATT218
Rthj-cas e	Thermal Resistance Junction-case			Max	0.75	1.79	oC/W
Rthjamb	Thermal	Resistance	Junction-ambient	Max		30	oC/W
Rt hcsin k	Thermal	Resistance	Case-sink	Typ		0.1	oC/W
Tl	Maximum Lead Temperature For Soldering Purpose					300	oC

AVALANCHE CHARACTERISTICS

Symbol

IA R

EAS

EAR

IA R

Parameter	Max Value	Unit
Avalanche Current, Repetitive or Not-Repetitive	60	A
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy	720	mJ
(starting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy	180	mJ
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive	37	A
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symbol	Parameter	Test Conditions	Min.	Typ. Max.	Unit
V( BR)DSS	Drain-source	ID = 250 μA VG S = 0	100		V
	Breakdown Voltage
IDS S	Zero Gate Voltage	VDS = Max Rating		250	μA
	Drain Current (VGS = 0)	VDS = Max Rating x 0.8 Tc = 125 oC		1000	μA
IG SS	Gate-body Leakage	VGS = ± 20 V		± 100	nA
	Current (VD S = 0)

ON ( )

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
VG S(th)	Gate Threshold Voltage	VDS = VGS	ID = 250	μA	2	2.9	4	V
RDS( on)	Static Drain-source On	VGS = 10 V	ID = 30	A		0.02	0.025	Ω
	Resistance	VGS = 10 V	ID = 30 A Tc = 100oC				0.05	Ω
ID( on)	On State Drain Current	VDS > ID( on) x RD S(on) max			60			A
		VGS = 10 V

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs ( )	Forward	VDS > ID( on) x RD S(on) max	ID = 30 A	25	35		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VG S = 0		4000	5000	pF
Coss	Output Capacitance				1100	1400	pF
Crss	Reverse Transfer				250	350	pF
	Capacitance

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STH60N10/FI STW60N10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min. Typ. Max. Unit
td(on)	Turn-on Time	VDD = 80 V	ID = 30 A	90	130	ns
tr	Rise Time	RG = 50 Ω	VGS = 10 V	270	380	ns
		(see test circuit, figure 3)
(di/dt)on	Turn-on Current Slope	VDD = 80 V	ID = 60 A	270		A/μs
		RG = 50 Ω	VGS = 10 V
		(see test circuit, figure 5)
Qg	Total Gate Charge	VDD = 80 V	ID = 30 A VGS = 10 V	120	170	nC
Qgs	Gate-Source Charge			16		nC
Qgd	Gate-Drain Charge			60		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
tr(Vof f)	Off-voltage Rise Time	VDD = 80 V	ID = 60 A		200	280	ns
tf	Fall Time	RG = 50 Ω	VGS = 10 V		210	290	ns
tc	Cross-over Time	(see test circuit, figure 5)			410	570	ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ. Max.	Unit
IS D	Source-drain Current				60	A
ISDM(•)	Source-drain Current				240	A
	(pulsed)
VS D ( )	Forward On Voltage	ISD = 60 A	VG S = 0		1.6	V
trr	Reverse Recovery	ISD = 60 A di/dt = 100 A/μs			180	ns
	Time	VDD = 30 V	Tj = 150 oC			μC
Qrr	Reverse Recovery	(see test circuit, figure 5)			1
	Charge
IRRM	Reverse Recovery				11	A
	Current

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218

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STH60N10/FI STW60N10

Thermal Impedeance For TO-218 and TO-247

Thermal Impedance For ISOWATT218

Derating Curve For TO-218 and TO-247

Derating Curve For ISOWATT218

Output Characteristics

Transfer Characteristics

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