SGS-THOMSON STP80N05-09 Technical data

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N - CHANNEL ENHANCEMENT MODE

”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

STP80N05-09

TYPE V

DSS

R

DS(on)

I

D

STP80N05-09 50 V < 0.009 Ω 80 A

■ ULTRA HIGHDENSITY TECHNOLOGY

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ LOW GATECHARGE

■ HIGH CURRENT CAPABILITY

■ 175

o

C OPERATING TEMPERATURE

DS(on)

=7mΩ

APPLICATIONS

■ SYNCROUNOUS RECTIFIERS

■ HIGH CURRENT, HIGHSPEED SWITCHING

■ DC-DC &DC-AC CONVERTER ABSOLUTE

MAXIMUM RATINGS

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dV/dt(1) Peak Diode Recovery voltageslope 5 V/ns

T

(•) Pulse width limited bysafe operatingarea (1)ISD≤ 60 A,di/dt≤ 200 A/ms,VDD≤ V

March1997

Drain-source Voltage (VGS=0) 50 V

DS

Drain- gate Voltage (RGS=20kΩ)50V

DGR

Gate-source Voltage ± 20 V

GS

I

Drain Current (continuous) at Tc=25oC80A

D

I

Drain Current (continuous) at Tc=100oC60A

D

(•) Drain Current (pulsed) 320 A

Total Dissipation at Tc=25oC 150 W

tot

Derating Factor 1 W/oC

Storage Temperature -65 t o 175

stg

T

Max. Operating Junction Temperature 175

j

(BR)DSS,TJ≤TJMAX

o

C

o

C

1/9

STP80N05-09

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax,δ <1%)

Single Pulse AvalancheEnergy

AS

(starting Tj=25oC, ID=IAR,VDD=25V)

1

62.5

0.5

300

60 A

600 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 50 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (VGS=0)

Gate-body Leakage

VDS=MaxRating
VDS= Max Rating Tc=125oC

1

10

VGS=± 20 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA234V
Static Drain-source On

VGS= 10V ID=40A 0.007 0.009 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

80 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs(∗) Forward

Transconductance

C
C
C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

= 40 A 25 S

VDS=25V f=1MHz VGS=0 5900

900
230

µA
µA

pF
pF
pF

2/9

STP80N05-09

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)onTurn-on Current Slop e VDD=48V ID=80A

Q
Q
Q

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

SOURCE DRAIN DIODE

Turn-on Time
Rise T ime

r

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Off-voltage Rise Time

t

Fall Ti me

f

Cross-over Time

c

VDD=30V ID=40A
RG=4.7 Ω VGS=10V

32

16042200

(see test circuit, figure 3)

240 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD=40V ID=80A VGS= 10 V 230

30
60

VDD=48V ID=40A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)

35
175
240

280 nC

46
230
300

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current

80
320

(pulsed)

VSD(∗) Forward On Voltage ISD=80A VGS=0 1.5 V

t

ReverseRecovery

rr

ISD= 80 A di/dt = 100 A/µs

125

Time

Q

I

RRM

ReverseRecovery

rr

Charge
ReverseRecovery

VR=30V Tj=150oC
(see test circuit, figure 5)

0.6
10

Current

(∗) Pulsed: Pulseduration =300 µs, duty cycle 1.5%
(•) Pulse widthlimitedby safe operatingarea

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/9